3.2s Datasheet | Specifications & PDF Download

3.7A, 20V N 　N 　N-Channel Enhancement Mode Field Effect Transistor SMD 　　Features 　■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　■High dense cell design fo

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD2394 DESCRIPTION www.dat·aWshiethet4TuO.co-2m20F package ·Low collecto

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2SK1618(L), 2SK1618(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Lo

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    Features TPC112S1/ TPC114S1  / TPC116S1 Single  16‐/14‐/12‐Bit,  Low  Power,  High  Performance  DACs Description  Single, 16-/14-/12-Bit Pin C

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Distributed by: www.Jameco.com ✦ 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Jameco Part Numbe

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TPC116S4/ TPC112S4 Quad 16-/12-Bit, Low Power, High Performance DACs Features Description  Quad, 16-/12-Bit Pin Compatible DACs TPC116S4: 16bit TP

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Distributed by: www.Jameco.com ✦ 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Jameco Part Numbe

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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DATA SHEET www.onsemi.com NPN Silicon General Purpose High Voltage Transistor MSD42SWT1G This NPN Silicon Planar Transistor is designed for general p

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Appl

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1013 Color TV Verttical Deflection Output Applications Power Switching Applications 2S

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2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3568 Switching Regulator Applications Unit: mm • Low drain-source O

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Silicon Junction FETs XIAOSHENG Symbol: Drain LH03 Series of Products interconvert: www.datasheet4u.com 2SK30A Gate Source Silicon N-Chinnel Jun

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2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3569 Switching Regulator Applications • Low drain-source ON-resistanc

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6090 DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CEO= 1500V (Min) ·High Speed S

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2SD2499 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2499 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TVs Unit: mm z High Voltage : VCBO

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Off-Line PWM Controllers with Integrated Power MOSFET STR-W6000S Series General Descriptions The STR-W6000S series are power ICs for switching power

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2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3565 Switching Regulator Applications • Low drain-source ON resistanc

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Minimum Lot-to-Lot variations for robu

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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