300H Datasheet | Specifications & PDF Download

GD300HFK120C2S STARPOWER SEMICONDUCTOR GD300HFK120C2S Molding Type Module 1200V/300A 2 in one-package IGBT Module IGBT General Description STARPOWER

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GD300HFL170C2S STARPOWER SEMICONDUCTOR GD300HFL170C2S 1700V/300A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low c

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RX65T300HS2A 650V GaN Power Transistor (FET) Features • Easy to use, compatible with standard gate drivers • Excellent QG x RDS(on) figure of merit

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GD300HFL170C6S STARPOWER SEMICONDUCTOR GD300HFL170C6S 1700V/300A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low c

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GD300HFY120C6S STARPOWER SEMICONDUCTOR GD300HFY120C6S 1200V/300A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low c

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GD300HFY120C2S STARPOWER SEMICONDUCTOR GD300HFY120C2S 1200V/300A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low c

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GD300HFQ120C2S STARPOWER SEMICONDUCTOR GD300HFQ120C2S 1200V/300A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low c

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GD300HFX65C8S STARPOWER SEMICONDUCTOR GD300HFX65C8S 650V/300A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low cond

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GD300HFX65C2S STARPOWER SEMICONDUCTOR GD300HFX65C2S 650V/300A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low cond

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Zener Diodes MAZS000 Series Silicon planar type Unit : mm 0.30 ± 0.05 0.30 ± 0.05 For constant voltage, constant-current, waveform clipper and surge

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Freescale Semiconductor Technical Data Document Number: MRF6V14300H Rev. 2, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mod

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Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 0, 11/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode

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Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet htt

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300V, 10A ULTRAFAST DUAL RECTIFIERS SF10A300HPR Ultrafast Recovery Rectifier Features  Low forward voltage drop and leakage current  Ultrafast r

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GD300HFU120C6SD STARPOWER SEMICONDUCTOR GD300HFU120C6SD 1200V/300A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low

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MITSUBISHI IGBT MODULES CM300HA-24H HIGH POWER SWITCHING USE INSULATED TYPE A Q S M H N V–DIA.(4 TYP.) E E C D F CM G C G X–M4 THD. (2 TYP.)

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MITSUBISHI FAST RECOVERY DIODE MODULES RM300HA-24F HIGH SPEED SWITCHING USE INSULATED TYPE RM300HA-24F DC current

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Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT32N300HV IXBH32N300HV VCES = IC110 = VCE(sat

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