IXBT32N300HV Datasheet - IXYS

IXBT32N300HV, Bipolar MOS Transistor

Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT32N300HV IXBH32N300HV VCES = IC110 = VCE(sat.

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Datasheet Details

Part number:

IXBT32N300HV

Manufacturer:

IXYS

File Size:

317.18 KB

Description:

Bipolar MOS Transistor

Features

* High Blocking Voltage
* High Voltage Packages
* Low Conduction Losses Advantages
* Low Gate Drive Requirement

Applications

* Switched-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2016 IXYS CORPORATION, All Rights Reserved DS100706(02/16) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified)

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IXBT32N300HV Bipolar MOS Transistor IXYS

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