IXBT32N300HV Datasheet - IXYS

IXBT32N300HV Bipolar MOS Transistor

Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT32N300HV IXBH32N300HV VCES = IC110 = VCE(sat)  3000V 32A 3.2V Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions Maximum Ratings TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3000 V 3000 V ± 20 V ± 30 V TC = 25°C TC = 110°C TC = 25°C, 1ms 80 A 32 A 280 A VGE = 15V, TVJ = 125°C, RG = 10 ICM =.

IXBT32N300HV Features

* High Blocking Voltage

* High Voltage Packages

* Low Conduction Losses Advantages

* Low Gate Drive Requirement

* High Power Density Applications:

* Switched-Mode and Resonant-Mode Power Supplies

* Uninterruptible Power Supplies (UPS)

* Laser Generators

* Capacito

IXBT32N300HV-IXYS.pdf

IXBT32N300HV Datasheet Preview — Preview of IXBT32N300HV PDF

Datasheet Details

Part number:

IXBT32N300HV

Manufacturer:

IXYS

File Size:

317.18 KB

Description:

Bipolar mos transistor.

📁 Related Datasheet

IXBT32N300 Bipolar MOS Transistor (IXYS)

IXBT10N170 Bipolar MOS Transistor (IXYS Corporation)

IXBT12N300 Bipolar MOS Transistor (IXYS)

IXBT12N300HV Bipolar MOS Transistor (IXYS)

IXBT14N300HV Bipolar MOS Transistor (IXYS)

IXBT16N170 BIMOSFET Monolithic Bipolar MOS Transistor (IXYS)

IXBT16N170A Bipolar MOS Transistor (IXYS Corporation)

IXBT16N170AHV Bipolar MOS Transistor (IXYS)

TAGS

IXBT32N300HV IXBT32N300HV Bipolar MOS Transistor IXYS

IXBT32N300HV Distributor