IXBT32N300HV Datasheet - IXYS

IXBT32N300HV Bipolar MOS Transistor

Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT32N300HV IXBH32N300HV VCES = IC110 = VCE(sat)  3000V 32A 3.2V Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions Maximum Ratings TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3000 V 3000 V ± 20 V ± 30 V TC = 25°C TC = 110°C TC = 25°C, 1ms 80 A 32 A 280 A VGE = 15V, TVJ = 125°C, RG = 10 ICM =.

IXBT32N300HV Features

* High Blocking Voltage

* High Voltage Packages

* Low Conduction Losses Advantages

* Low Gate Drive Requirement

* High Power Density Applications:

* Switched-Mode and Resonant-Mode Power Supplies

* Uninterruptible Power Supplies (UPS)

* Laser Generators

* Capacito

IXBT32N300HV Datasheet (317.18 KB)

IXBT32N300HV Datasheet Preview — Preview of IXBT32N300HV PDF

Datasheet Details

Part number:

IXBT32N300HV

Manufacturer:

IXYS

File Size:

317.18 KB

Description:

Bipolar mos transistor.

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IXBT32N300HV Bipolar MOS Transistor IXYS

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