IXBT32N300

Bipolar MOS Transistor

IXYS

Image	Manufacturer	B2B MPN	Description	Distributor	Stock	Quantity	Price	Buy Now
	IXYS Corporation	IXBT32N300	IGBT 3000V 80A TO-268AA	DigiKey	0	30 units	$29.5	🛒 Buy Now

Download Datasheet (180.79 KB)

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Datasheet Details

Part number:

IXBT32N300

Manufacturer:

IXYS

File Size:

180.79 KB

Description:

Bipolar mos transistor.
Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transis.
tor IXBH32N300 IXBT32N300 VCES = IC110 = VCE(sat) ≤ 3000V 32A 3.2V Symbol VCES VCGR VGES VGEM IC.

✔ IXBT32N300 Features

z High Blocking Voltage z International Standard Packages z Low Conduction Losses Advantages z Low Gate Drive Requirement z High Power Density Applications: z Switched-Mo

✔ IXBT32N300 Application

z Switched-Mode and Resonant-Mode Power Supplies z Uninterruptible Power Supplies (UPS) z Laser Generators

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IXBT32N300 Bipolar MOS Transistor IXYS

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