IXBT32N300, IXBH32N300 Bipolar MOS Transistor

IXYS

Description

Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH32N300 IXBT32N300 VCES = IC110 = VCE(sat.

📥 Download Datasheet

IXBT32N300 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXBT32N300, IXBH32N300. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IXBT32N300, IXBH32N300
Manufacturer: IXYS
File Size: 180.79 KB
Datasheet: IXBH32N300-IXYS.pdf
Description: Bipolar MOS Transistor
Note: This datasheet PDF includes multiple part numbers: IXBT32N300, IXBH32N300.
Please refer to the document for exact specifications by model.

Applications

* z Switched-Mode and Resonant-Mode Power Supplies z Uninterruptible Power Supplies (UPS) z Laser Generators z Capacitor Discharge Circuits z AC Switches © 2009 IXYS CORPORATION, All Rights Reserved DS100118(02/09) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Value

IXBT32N300 Distributors

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IXBH32N300 Bipolar MOS Transistor IXYS

IXYS IXBT32N300-like datasheet