30N50 Datasheet | Specifications & PDF Download

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFT 30N50 IXFH/IXFT 32N50 V DSS 500 V 500 V I D25 30

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WMS30N500SK N-Channel Silicon MOSFET Rev.02 - 18 June 2024 Product data sheet 1. General description WMS30N500SK is a high performance super logic l

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID=30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance :

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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY30N50E/D Designer's TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancem

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Silicon N-Channel Power MOSFET ○R CS30N50 ANR General Description： VDSS 500 CS30N50 ANR, the silicon N-channel Enhanced ID 30 VDMOSFETs, is ob

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www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFT 30N50 IXFH/IXFT 32N50 500

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HiPerFETTM Power MOSFETs Q-Class IXFK/IXFX 30N50Q IXFK/IXFX 32N50Q N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS ID25 500 V 3

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PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS V= DSS ID25 = ≤ RDS(o

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HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 30N50Q (Electrically Isolated Back Surface) IXFR 32N50Q N-Channel Enhancement Mode High dV/dt, Low trr,

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTH30N50L ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Low switching

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 200mΩ(Max) ·Fast Sw

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 200mΩ(Max) ·Fast Sw

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 200mΩ(Max) ·Fast Sw

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY30N50E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY30N

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS V=

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS V=

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Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement ModeAvalanche Rated IXTH 30N50P IXTT 30N50P IXTQ 30N50P IXTV 30N50P IXTV

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ZDX130N50 Nch 500V 13A Power MOSFET lOutline Datasheet VDSS RDS(on) (Max.) ID PD lFeatures 1) Low on-resistance. 2) Fast switching speed. 500V 0.52

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Preliminary Technical Information Power MOSFET with Extended FBSOA N-Channel Enhancement Mode IXTH30N50L IXTQ30N50L IXTT30N50L D O DD Symbol VDSS V

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