36N06 Datasheet | Specifications & PDF Download

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP36N06V/D Designer's TMOS V Power Field Effect Transistor N–Ch

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Philips Semiconductors Product specification PowerMOS transistor PHP36N06E GENERAL DESCRIPTION N-channel enhancement mode field-effect power trans

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MTP36N06V Preferred Device Power MOSFET 32 Amps, 60 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and

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MTB36N06V Preferred Device Power MOSFET 32 Amps, 60 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTB36N06V/D TMOS Power Field Effect Transistor D2PAK for Surface Mount TMOS

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Philips Semiconductors Product specification PowerMOS transistor PHB36N06E GENERAL DESCRIPTION N-channel enhancement mode field-effect power trans

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB36N06E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount De

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() CRSE036N06L2 SkyMOS2 N-MOSFET 60V, 3.2mΩ, 22A Features • Uses CRM(CQ) advanced SkyMOS2 technology • Extremely low on-resistance RDS(on) • Excelle

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FTD36N06N N-Channel MOSFET Applications: •Automotive •DC Motor Control •DC-DC Converters and Off-Line UPS Features: • RoHS Compliant • Low ON Resista

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FTU36N06N N-Channel MOSFET Applications: •Automotive •DC Motor Control •DC-DC Converters and Off-Line UPS Features: • RoHS Compliant • Low ON Resista

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N-Channel MOSFET Applications: •Automotive •DC Motor Control •DC-DC Converters and Off-Line UPS Features: • RoHS Compliant • Low ON Resistance • Low G

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-

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w w a D . w S a t e e h U 4 t m o .c STP36N06 STP36N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR R DS(on) < 0.04 Ω < 0.04 Ω ID 36 A 21

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w w a D . w S a t e e h U 4 t m o .c STP36N06L STP36N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR R DS(on) < 0.04 Ω < 0.04 Ω ID 36 A

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w w a D . w S a t e e h U 4 t m o .c STP36N06L STP36N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR R DS(on) < 0.04 Ω < 0.04 Ω ID 36 A

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www.DataSheet4U.com w w a D . w S a t e e h U 4 t m o .c STP36N06 STP36N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR R DS(on) < 0.04

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w w a D . w S a t e e h U 4 t m o .c STP36N06 STP36N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR R DS(on) < 0.04 Ω < 0.04 Ω ID 36 A 21

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ST36N06 N Channel Enhancement Mode MOSFET 36.0A DESCRIPTION ST36N06 is used trench technology to provide excellent RDS(on) and gate charge. Those devi

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