3N06 Datasheet | Specifications & PDF Download

EMD03N06ES N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 4.0mΩ ID 150A G UIS, Rg

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Features  N-Channel，10V Logic Level Control  Enhancement mode  Very low on-resistance  Fast Switching  100% Avalanche Tested  Pb-free lead plati

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Data Sheet RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE July 1999 File Number 3948.5 [ /Title (RLD0 3N06C LE, RLD03 N06CL ESM, RLP03 N06CL E) /Subject

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isc N-Channel MOSFET Transistor IPD033N06N, IIPD033N06N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3.3mΩ ·Enhancement mode: ·100% avalanch

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3N06-VB 3N06-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.075 at VGS = 10 V 60 0.086 at VGS = 4

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ADV ADM3N06B N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 3.0A RDS(ON) (mΩ) 105mΩ SOT-23 Absolute Maximum Ra

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PHP73N06T; PHB73N06T N-channel enhancement mode field-effect transistor Rev. 01 — 12 March 2001 Product specification 1. Description N-channel enhancem

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PHP73N06T; PHB73N06T N-channel enhancement mode field-effect transistor Rev. 01 — 12 March 2001 Product specification 1. Description N-channel enhancem

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EMD03N06FS N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 4.1mΩ ID 90A G UIS, Rg

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EMD03N06E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 3.5mΩ ID 180A G UIS, Rg

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 3mΩ ID 97A N Channel MOSFET UIS, Rg 10

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Features  N-Channel，10V Logic Level Control  Enhancement mode  Very low on-resistance  Fast Switching  100% Avalanche Tested  Pb-free lead plati

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Features  N-Channel，10V Logic Level Control  Enhancement mode  Very low on-resistance  Fast Switching  100% Avalanche Tested  Pb-free lead plati

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Features  N-Channel，10V Logic Level Control  Enhancement mode  Very low on-resistance  Fast Switching  100% Avalanche Tested  Pb-free lead plati

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Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested 

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Features  N-Channel，10V Logic Level Control  Enhancement mode  Very low on-resistance  Fast Switching  100% Avalanche Tested  Pb-free lead plati

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Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance

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Features ♦Low On-Resistance ♦Fast Switching ♦High Effective ♦Lead-Free, RoHS Compliant SL03N06 60V/3A N-Channel Advanced Power MOSFET Description SL

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FQB13N06 / FQI13N06 May 2001 QFET FQB13N06 / FQI13N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect t

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FQB13N06L / FQI13N06L May 2001 QFET FQB13N06L / FQI13N06L 60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power fiel

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