3N06 datasheet | Specifications & PDF Download

IPD053N06N3G - OptiMOS Power-Transistor

www.DataSheet4U.net Type IPD053N06N3 G OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized techn

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onsemi

UJ3N065025K3S - SiC JFET

Silicon Carbide (SiC) JFET – EliteSiC, Power N-Channel, TO247-3, 650 V, 25 mohm UJ3N065025K3S Description onsemi offers the High-Performance G3 SiC no

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Excelliance MOS

EMD03N06HS - N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 3mΩ ID 97A N Channel MOSFET UIS, Rg 10

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Excelliance MOS

EMD03N06E - MOSFET

EMD03N06E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 3.5mΩ ID 180A G UIS, Rg

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IPS

FTP03N06NA - N-Channel MOSFET

N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi

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Excelliance MOS

EMD03N06ES - MOSFET

EMD03N06ES N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 4.0mΩ ID 150A G UIS, Rg

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Fairchild Semiconductor

13N06L - FQB13N06L

FQB13N06L / FQI13N06L May 2001 QFET FQB13N06L / FQI13N06L 60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power fiel

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Excelliance MOS

EMD03N06FS - MOSFET

EMD03N06FS N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V D RDSON (MAX.) 4.1mΩ ID 90A G UIS, Rg

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Vishay

SUD23N06-31 - N-Channel MOSFET

N-Channel 60 V (D-S), MOSFET SUD23N06-31 Vishay Siliconix PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.031 at VGS = 10 V 0.045 at VGS = 4.5 V ID (A)a

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Fairchild Semiconductor

FQT13N06L - 60V LOGIC N-Channel MOSFET

FQT13N06L May 2001 QFET FQT13N06L 60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are

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ST Microelectronics

P53N06 - STP53N06

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Infineon

IPP093N06N3 - Power-Transistor

Id\Q IPB090N06N3 G IPP093N06N3 G %&$ #™3 Power-Transistor Features P6? ABH>3 A53 C9693 1C9? > 4A9E5B1>4 43 43 ,& ) , P G3 5<<5>C71C5 3 81A75

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Inchange Semiconductor

53N06 - N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 53N06 ·DESCRIPTION ·Drain Current ID= 53A@ TC=25℃ ·Drain Source Vol

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Infineon

2EDL23N06PJ - 600V Half Bridge Gate Driver

2EDL23 family 2EDL23x06PJ family 600 V Half Bridge Gate Driver with OCP and Integrated Bootstrap Diode Features  Infineon thin-film-SOI-technology

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Fairchild Semiconductor

FD6M033N06 - 60V/73A Synchronous Rectifier

FD6M033N06 60V/73A Synchronous Rectifier Module March 2008 FD6M033N06 60V/73A Synchronous Rectifier Module General Features • Very High Rectificatio

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Yangzhou Yangjie

YJL03N06A - N-Channel Enhancement Mode Field Effect Transistor

YJL03N06A RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5

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Vanguard Semiconductor

VSD003N06HS - N-Channel Advanced Power MOSFET

Features  N-Channel，10V Logic Level Control  Enhancement mode  Very low on-resistance  Fast Switching  100% Avalanche Tested  Pb-free lead plati

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Fairchild Semiconductor