3N06 Datasheet | Specifications & PDF Download

N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi

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FQB13N06L / FQI13N06L May 2001 QFET FQB13N06L / FQI13N06L 60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power fiel

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RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Data Sheet July 1999 File Number 3948.5 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic

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IR3N06 Report Abuse Build a Site Browse Sites Seite 1 Search: The Web Tripod Free Online Golf Share This Page « Previous | Top 100 | Next » IR

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, TO-247-4L V(BR)DSS 650 V RDS(ON) TYP 23 mW @ 18 V ID MAX 6

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 23 mohm, 650 V, M3S, TOLL NTBL023N065M3S Features • Typical RDS(on) = 23 mW @ VGS

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PHP73N06T; PHB73N06T N-channel enhancement mode field-effect transistor Rev. 01 — 12 March 2001 Product specification 1. Description N-channel enhancem

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MOSFET – Power, Single N-Channel 60 V, 9.2 mW, 50 A NVMYS9D3N06CL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize C

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MMDF3N06VL Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual Designed for low voltage, high speed switching applications in power supplies, converte

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Data Sheet RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE July 1999 File Number 3948.5 [ /Title (RLD0 3N06C LE, RLD03 N06CL ESM, RLP03 N06CL E) /Subject

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Features  N-Channel，10V Logic Level Control  Enhancement mode  Very low on-resistance  Fast Switching  100% Avalanche Tested  Pb-free lead plati

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FQT13N06 January 2002 QFET FQT13N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pro

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FQD13N06L / FQU13N06L May 2001 QFET FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power fiel

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ADV ADM23N06D N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 23A RDS(ON) (mΩ) 42mΩ TO251 2 1 23 Absolute Maxim

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2EDL23 family 2EDL23x06PJ family 600 V Half Bridge Gate Driver with OCP and Integrated Bootstrap Diode Features  Infineon thin-film-SOI-technology

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NP23N06YDG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0014EJ0100 Rev.1.00 Jul 01, 2010 Description The NP23N06YDG is N-channel MOS Fiel

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Silicon N-Channel Power MOSFET ○R CS3N06 AS1-G General Description： CS3N06 AS1-G the silicon N-channel Enhanced VDMOSFETs, is obtained by the high

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Public IPB013N06NF2S Final datasheet MOSFET StrongIRFET™2 Power‑Transistor, 60 V Features • Optimized for wide range of applications • N‑channel, no

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