3N65 Datasheet | Specifications & PDF Download

MDF13N65B N-channel MOSFET 650V MDF13N65B N-Channel MOSFET 650V, 14A, 0.46Ω General Description These N-channel MOSFET are produced using advanced M

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NTHL033N65S3HF MOSFET – Power, N‐Channel, SUPERFET III, FRFET 650 V, 70 A, 33 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high

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MDF13N65B N-channel MOSFET 650V MDF13N65B N-Channel MOSFET 650V, 14A, 0.46Ω General Description These N-channel MOSFET are produced using advanced M

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UNISONIC TECHNOLOGIES CO., LTD 13N65-ML 13A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 13N65-ML is a high voltage power MOSFET combines advanc

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650V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technolog

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w w w .d e e h s a t a . u t4 m o c www.DataSheet4U.com

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650V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technolog

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CYStech Electronics Corp. Spec. No. : C110FP Issued Date : 2015.07.29 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTN3N6

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650V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technolog

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UNISONIC TECHNOLOGIES CO., LTD 3N65 3A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N65 is a high voltage and high current power MOSFET designe

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ICE13N65 ICE13N65 N-Channel Enhancement Mode MOSFET ID V(BR)DSS Product Summary TA=25oC 13A ID=250uA 650V Max Min Features • Low rDS(on) • Ult

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STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2 N-channel 650 V, 0.117 Ω typ., 24 A MDmesh™ M2 Power MOSFETs in D²PAK, TO-220FP, TO-220 and I²PAK packa

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650V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technolog

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ICE13N65FP N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchi

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3A,650V N-Channel Power Mosfet FEATURES  RDS(ON) =3.8Ω@ VGS = 10V  Ultra low gate charge ( typical 10 nC ) Pb Lead-free  Low reverse transfer C

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NB3N65027 3.3V Programmable 3-PLL Clock Synthesizer with 6 LVTTL/LVCMOS Outputs w/OE The NB3N65027 is a LVCMOS PLL−synthesized clock generator. It

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HFS13N65U HFS13N65U 650V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ V

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STU3N65M6 Datasheet N-channel 650 V, 1.4 Ω typ., 3.5 A MDmesh™ M6 Power MOSFET in an IPAK package TAB IPAK 3 2 1 D(2, TAB) G(1) S(3) AM01475V1

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MOSFETs Silicon Carbide N-Channel MOS TW083N65C TW083N65C 1. Applications • Switching Voltage Regulators 2. Features (1) Chip design of 3rd generati

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CYStech Electronics Corp. Spec. No. : C798FP Issued Date : 2010.03.12 Revised Date : 2011.03.30 Page No. : 1/ 11 N-Channel Enhancement Mode Power MO

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