3N80 Datasheet | Specifications & PDF Download

HiPerFETTM Power MOSFETs Q Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg IXFH 13N80Q IXFT 13N80Q VDSS ID25 RDS(on) = = = 800

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MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V ID25 11 A 13 A RDS(on) 0.95 Ω 0.80 Ω Symbol Test Con

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FQP3N80C / FQPF3N80C — N-Channel QFET® MOSFET FQP3N80C / FQPF3N80C N-Channel QFET® MOSFET 800 V, 3.0 A, 4.8  Features • 3.0 A, 800 V, RDS(on) = 4.8

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Advanced Technical Information IXKC 13N80C CoolMOS™ 1) Power MOSFET ISOPLUS™ Package N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Elect

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HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt P

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www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet IXFA 3N80 IXFP 3N

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www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet IXFA 3N80 IXFP 3N

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HiPerFETTM Power MOSFETs Q Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg IXFH 13N80Q IXFT 13N80Q VDSS ID25 RDS(on) = = = 800

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HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt P

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SEMICONDUCTOR TECHNICAL DATA KF3N80D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristi

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM11N80 IXFM13N80 IXFH/IXFM 11 N80 IXFH/IXFM 13 N

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Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP03N80 SDF03N80 Ver 1.1 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ

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Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP03N80 SDF03N80 Ver 1.1 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ

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GPT03N80 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to withstand high energy in the a

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MOSFET – N-Channel, QFET 800 V, 3.0 A, 4.8 mW FQP3N80C, FQPF3N80C Description This N−Channel enhancement mode power MOSFET is produced using onsemi’s

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DG3N80 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG3N80N，， ，，，。 ，，。 DG3N80 is an N-channel enhancement mode MOSFET, which is

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FQB3N80 / FQI3N80 September 2000 QFET FQB3N80 / FQI3N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effec

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AOD3N80 800V,2.8A N-Channel MOSFET General Description Product Summary The AOD3N80 has been fabricated using an advanced high voltage MOSFET proces

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor AOD3N80 ·FEATURES ·With TO-252(DPAK) packaging ·High speed switching ·Easy to use ·100% avala

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