3N80 Datasheet | Specifications & PDF Download

FQP3N80C / FQPF3N80C — N-Channel QFET® MOSFET FQP3N80C / FQPF3N80C N-Channel QFET® MOSFET 800 V, 3.0 A, 4.8  Features • 3.0 A, 800 V, RDS(on) = 4.8

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SEMICONDUCTOR 3N80 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET DESCRIPTION (3A, 800Volts) The Nell 3N80 is a three-terminal

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PFU3N80EG FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switch

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Aug 2006 PFP3N80 / PFF3N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances 

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HiPerFETTM Power MOSFETs Q Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg IXFH 13N80Q IXFT 13N80Q VDSS ID25 RDS(on) = = = 800

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Aug 2006 PFP3N80 / PFF3N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances 

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www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet IXFA 3N80 IXFP 3N

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www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet IXFA 3N80 IXFP 3N

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SVF3N80M/F/D_Datasheet 3A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF3N80M/F/D is an N-channel enhancement mode power MOS field effect transistor w

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N-Channel MOSFET Applications: • CRT, TV/Monitor • Other Applications ITD03N80A ITU03N80A Pb Lead Free Package and Finish VDSS 800 V RDS(ON) (Typ

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HiPerFETTM Power MOSFETs Q Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg IXFH 13N80Q IXFT 13N80Q VDSS ID25 RDS(on) = = = 800

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM11N80 IXFM13N80 IXFH/IXFM 11 N80 IXFH/IXFM 13 N

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Silicon N-Channel Power MOSFET CS3N80 A3 ○R General Description： CS3N80 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne

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MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V ID25 11 A 13 A RDS(on) 0.95 Ω 0.80 Ω Symbol Test Con

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May 2011 PFU3N80 / PFD3N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances 

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HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt P

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HFH13N80 Dec 2005 HFH13N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 0.77 Ω ID = 12.6 A FEATURES  Originative New Design  Superior Avala

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SEMICONDUCTOR TECHNICAL DATA KF3N80D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristi

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