3N80 Datasheet | Specifications & PDF Download

SEMICONDUCTOR 3N80 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET DESCRIPTION (3A, 800Volts) The Nell 3N80 is a three-terminal

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FQP3N80C / FQPF3N80C — N-Channel QFET® MOSFET FQP3N80C / FQPF3N80C N-Channel QFET® MOSFET 800 V, 3.0 A, 4.8  Features • 3.0 A, 800 V, RDS(on) = 4.8

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FQP3N80C / FQPF3N80C — N-Channel QFET® MOSFET FQP3N80C / FQPF3N80C N-Channel QFET® MOSFET 800 V, 3.0 A, 4.8  Features • 3.0 A, 800 V, RDS(on) = 4.8

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SVF3N80M/F/D_Datasheet 3A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF3N80M/F/D is an N-channel enhancement mode power MOS field effect transistor w

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SVF3N80M/F/D_Datasheet 3A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF3N80M/F/D is an N-channel enhancement mode power MOS field effect transistor w

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Silicon N-Channel Power MOSFET ○R CS3N80F A9 General Description： VDSS 800 CS3N80F A9, the silicon N-channel Enhanced VDMOSFETs, ID 3 is obtai

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SEMICONDUCTOR TECHNICAL DATA KF3N80F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics

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MHF03N80CT MHF03N80CT Document ID : DS-21M56 Revised Date : 2015/09/16 Revision : C1 MHF03N80CT Document ID : DS-21M56 Revised Date : 2015/09/16 Revi

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SVF3N80D-VB www.VBsemi.com SVF3N80D-VB Datasheet /$IBOOFM
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Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ.

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UNISONIC TECHNOLOGIES CO., LTD 3N80 3.0 Amps, 800Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N80 provide excellent RDS(ON), low gate charge an

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www.DataSheet.co.kr SAMWIN SW3N80 N-channel MOSFET BVDSS : 800V ID : 3.0A RDS(ON) : 4.5ohm 1 2 1 3 2 2 Features ■ High ruggedness ■ RDS(ON) (Max 4.

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FQB3N80 / FQI3N80 September 2000 QFET FQB3N80 / FQI3N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effec

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP3N80/

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FQA13N80 800V N-Channel MOSFET September 2006 QFET FQA13N80 800V N-Channel MOSFET Features • 12.6A, 800V, RDS(on) = 0.75Ω @VGS = 10 V • Low gate cha

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FQAF13N80 March 2001 QFET FQAF13N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr

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FQPF3N80 September 2000 QFET FQPF3N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are

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BRD3N80 Rev.D May.-2016 DATA SHEET / Descriptions TO-252 N MOS 。N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,。 Low gate charge,

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HiPerFETTM Power MOSFETs Q Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg IXFH 13N80Q IXFT 13N80Q VDSS ID25 RDS(on) = = = 800

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STFI13N80K5 N-channel 800 V, 0.37 Ω typ.,12 A MDmesh™ K5 Power MOSFET in an I²PAKFP package Datasheet - production data Features 1 23 I2PAKFP Figur

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