3N80C Datasheet | Specifications & PDF Download

FQP3N80C / FQPF3N80C — N-Channel QFET® MOSFET FQP3N80C / FQPF3N80C N-Channel QFET® MOSFET 800 V, 3.0 A, 4.8  Features • 3.0 A, 800 V, RDS(on) = 4.8

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FQP3N80C / FQPF3N80C — N-Channel QFET® MOSFET FQP3N80C / FQPF3N80C N-Channel QFET® MOSFET 800 V, 3.0 A, 4.8  Features • 3.0 A, 800 V, RDS(on) = 4.8

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FQP3N80C / FQPF3N80C — N-Channel QFET® MOSFET FQP3N80C / FQPF3N80C N-Channel QFET® MOSFET 800 V, 3.0 A, 4.8  Features • 3.0 A, 800 V, RDS(on) = 4.8

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Advanced Technical Information IXKC 13N80C CoolMOS™ 1) Power MOSFET ISOPLUS™ Package N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Elect

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MOSFET – N-Channel, QFET 800 V, 3.0 A, 4.8 mW FQP3N80C, FQPF3N80C Description This N−Channel enhancement mode power MOSFET is produced using onsemi’s

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MOSFET – N-Channel, QFET 800 V, 3.0 A, 4.8 mW FQP3N80C, FQPF3N80C Description This N−Channel enhancement mode power MOSFET is produced using onsemi’s

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MHF03N80CT MHF03N80CT Document ID : DS-21M56 Revised Date : 2015/09/16 Revision : C1 MHF03N80CT Document ID : DS-21M56 Revised Date : 2015/09/16 Revi

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SW3N80C N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252  High ruggedness  Low RDS(ON) (Typ 3.9Ω)@VGS=10V 

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isc N-Channel MOSFET Transistor ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 290mΩ@VGS=10V ·100% avalanche tested

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SLP3N80C / SLF3N80C 800V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. T

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SLP3N80C / SLF3N80C 800V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. T

Rating: 1 ★ (1 votes)