4-30V Datasheet | Specifications & PDF Download

AO3400 30V N-Channel MOSFET General Description Product Summary The AO3400 combines advanced trench MOSFET technology with a low resistance package

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A09T http://www.osen.net.cn 30V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Improved dv/dt c

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AON6554 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Char

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AON6426 30V N-Channel MOSFET General Description The AON6426 combines advanced trench MOSFET technology with a low resistance package to provide extr

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AON6324 30V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS an

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QN3109M6N N N-Channel 30V Fast Switching MOSFET General Description The QN3109M6N is the highest performance trench N-Channel MOSFET with extreme hig

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AO4801A 30V P-Channel MOSFET General Description Product Summary The AO4801A combines advanced trench MOSFET technology with a low resistance packa

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B04N03-VB B04N03-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.002 at VGS = 10 V 0.003 at VGS

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http://www.fujielectric.com/products/semiconductor/ 6MBP30VSC060-50 IGBT Modules IGBT MODULE (V series) 600V / 30A / IPM Features Low-side IGBTs a

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UMW IRLML2803TR 30V N-ChanneI MOSFET 1.Description The IRLML2803TR uses advanced trench technology to provide excellent RDS(on) with low gate charge.

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30V, 150mA TinyPowerTM LDO HT75Rxx-1 Revision: V1.00 Date: May 13, 2025 HT75Rxx-1 30V, 150mA TinyPowerTM LDO Table of Contents Features

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UMW SI2304A 30V N-ChanneI MOSFET 1.Description The SI2304A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operatio

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30V, 150mA TinyPowerTM LDO HT75Rxx-1 Revision: V1.00 Date: May 13, 2025 HT75Rxx-1 30V, 150mA TinyPowerTM LDO Table of Contents Features

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QM3004D N-Ch 30V Fast Switching MOSFETs General Description The QM3004D is the highest performance trench N-ch MOSFETs with extreme high cell density

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UMW R General Description This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Ba

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30V, 150mA TinyPowerTM LDO with Protections HT75Rxx-7 Revision: V1.00 Date: May 13, 2025 HT75Rxx-7 30V, 150mA TinyPowerTM LDO with Protections Table

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Description AP80N03D 30V N-Channel Enhancement Mode MOSFET The AP80N03D uses advanced trench technology to provide excellent RDS(ON), low gate charg

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2SK3424-VB 2SK3424-VB Datasheet N-Channel 30 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4

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120A, 30V N-CHANNEL MOSFET GENERAL DESCRIPTION The SFD3012T uses advanced trench technology and design to provide excellent RDS(pn) with low gate char

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R1243K is NRND product. R1243x Series 30 V Input 2 A Buck DC/DC Converter No.EA-206-241216 OUTLINE The R1243x is a CMOS-based step-down DC/DC conve

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