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INCHANGE
3DD13009 - NPN Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collect.
Inchange Semiconductor
LM317 - Adjustable Voltage Regulator
isc Adjustable Voltage Regulator INCHANGE Semiconductor LM317 FEATURES ·Output Voltage Range :1.2V to 37V ·Output Current In Excess of 1.5A ·0.1% Li.
Inchange Semiconductor
D5011 - 2SD5011
www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5011 DESCRIPTION ·High Breakdown Voltage.
Inchange Semiconductor
TIC116D - Thyristors
isc Thyristors TIC116D APPLICATIONS ·8A contimunous on-state current ·80A surge-current ·Glass passivated ·Max IGT of 20mA ·100% avalanche tested ·M.
INCHANGE
IRFZ44N - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Volta.
Inchange Semiconductor
IRF3710 - N-Channel MOSFET Transistor
isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF3710 ·FEATURES ·Drain Current –ID=57A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·St.
Inchange Semiconductor
7912 - TO-220C Three Terminal Negative Voltage Regulator
INCHANGE Semiconductor isc Product Specification isc Three Terminal Negative Voltage Regulator 7912 FEATURES ·Output current in excess of 1.5A ·Ou.
Inchange Semiconductor
7812 - TO-220C Three Terminal Positive Voltage Regulator
isc Three Terminal Positive Voltage Regulator 7812 FEATURES ·Output current in excess of 1.5A ·Output voltage of 12V ·Internal thermal overload prot.
Inchange Semiconductor
2SK604 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Fast Switching Speed ·100% avalanche .
Inchange Semiconductor
5N50 - TO-220F N-Channel MOSFET
isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current: ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·100% aval.
INCHANGE
AOD2922 - N-Channel MOSFET
Isc N-Channel MOSFET Transistor AOD2922 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100%.
Inchange Semiconductor
C1061 - Silicon NPN Power Transistor
www.DataSheet.co.kr Inchange Semiconductor Silicon NPN Power Transistors Product Specification 2SC1061 DESCRIPTION With TO-220 package Low saturatio.
Inchange Semiconductor
9N50 - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 9N50 ·DESCRIPTION ·Drain Current ID= 9A@ TC=25℃ ·Drain Source Volta.
Inchange Semiconductor
7909 - Three Terminal Negative Voltage Regulator
INCHANGE Semiconductor isc Three Terminal Negative Voltage Regulator 7909 FEATURES ·Output current in excess of 1.0A ·Output voltage of -9V ·Intern.
Inchange Semiconductor
7N45 - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 7N45 ·DESCRIPTION ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Volta.
INCHANGE
TT2190 - NPN Transistor
isc Silicon NPN Power Transistor TT2190 DESCRIPTION ·High speed. ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low Collector Saturation Voltage- : V.
INCHANGE
7N60 - N-Channel MOSFET
isc N-Channel Mosfet Transistor INCHANGE Semiconductor 7N60 ·FEATURES ·Drain Current –ID= 7.4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Sta.C-3880G - 1.2 INCH/ 8 X 8 DOT MATRIX DISPLAY
C/A-3880X 1.2 INCH, 8 X 8 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt.C-3880X - 1.2 INCH/ 8 X 8 DOT MATRIX DISPLAY
C/A-3880X 1.2 INCH, 8 X 8 DOT MATRIX DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Opt.
Kingbright
TC23-11GWA - 58.34mm (2.3 INCH) 8x8 DOT MATRIX DISPLAY
58.34mm (2.3 INCH) 8x8 DOT MATRIX DISPLAY Part Number: TC23-11GWA Green Features z 2.3 inch matrix height. z Dot size 5mm. z Low current operation..
