4N10 Datasheet | Specifications & PDF Download

IPTC014N10NM5 MOSFET OptiMOSTM 5 Power-Transistor, 100 V Features • N-channel • Very low on-resistance RDS(on) • Superior thermal resistance • 100% a

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www.DataSheet4U.com HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS d

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Advance Technical Information www.DataSheet4U.com HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Lo

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Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFK24N100Q3 IXFX24N100Q3 D G S Symbol VDSS VDG

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() CRST024N10N4Z SkyMOS4 N-MOSFET 100V, 2.1mΩ, 180A Features • Uses CRM(CQ) advanced SkyMOS4 technology • Extremely low on-resistance RDS(on) • Exce

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Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 24N100 VDSS = 1000 V ISOPLUS247TM 22 A ID25 = (Electrically Isolated Back Surface) Singl

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www.DataSheet4U.com HiPerFETTM Power MOSFETs VDSS ID25 RDS(on) N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sh

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PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD T

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Silicon N-Channel Power MOSFET CS14N10 A3 ○R General Description： CS14N10 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high dens

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Preliminary Technical Information LinearL2TM Power MOSFET w/Extended FBSOA IXTA64N10L2 IXTP64N10L2 IXTH64N10L2 VDSS = 100V ID25 = 64A  RDS(on) 32m

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MOSFET - Power, Single N-Channel, D2PAK7 100 V, 4.1 mW, 203 A NTBGS004N10G Features • Low RDS(on) • High Current Capability • Wide SOA • These Devic

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Advanced Technical Data HiPerFET Power MOSFETs TM IXFR14N100Q2 Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg,

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PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA4N100P IXFP4N100P VDSS ID25 RDS(on) = 1000

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Advance Technical Information HiPerFETTM Power MOSFET Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Fast Intrinsic Diode Sym

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isc N-Channel MOSFET Transistor IXTY1R4N100P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 11.8Ω@VGS=10V ·Fully characterized avalanche vo

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PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB44N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR

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1000V XPTTM GenX4TM IGBT High Speed IGBT for 20-50kHz Switching Advance Technical Information IXYA24N100C4HV IXYP24N100C4 VCES = 1000V IC110 = 24A

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www.DataSheet4U.com HiPerFETTM Power MOSFETs VDSS ID25 RDS(on) N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sh

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HiPerFETTM Power MOSFET ISOPLUS264TM (Electrically Isolated Tab) Single-Die MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low

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