4N10 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance :

(47 views)

() CRST024N10N4Z SkyMOS4 N-MOSFET 100V, 2.1mΩ, 180A Features • Uses CRM(CQ) advanced SkyMOS4 technology • Extremely low on-resistance RDS(on) • Exce

(29 views)

UNISONIC TECHNOLOGIES CO., LTD 4N100 Power MOSFET 4A, 1000V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N100 is an N-channel MOSFET, it uses UTC’s

(25 views)

Silicon N-Channel Power MOSFET CS14N10 A3 ○R General Description： CS14N10 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high dens

(24 views)

() CRST024N10N3Z,CRSS022N10N3Z SkyMOS3 N-MOSFET 100V, 2mΩ, 180A Features • Uses CRM(CQ) advanced SkyMOS3 technology • Extremely low on-resistance RD

(21 views)

UNISONIC TECHNOLOGIES CO., LTD 4N100-FCQ Preliminary 4A, 1000V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 4N100-FCQ provide excellent RDS(ON)

(19 views)

FQAF44N10 December 2000 QFET FQAF44N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are

(16 views)

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 14mΩ ID 40A G UIS, Rg 100% Tested

(15 views)

FQH44N10 — N-Channel QFET® MOSFET FQH44N10 N-Channel QFET® MOSFET 100 V, 48 A, 39 mΩ November 2013 Description This N-Channel enhancement mode powe

(15 views)

FQPF44N10 December 2000 QFET FQPF44N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are

(15 views)

UNISONIC TECHNOLOGIES CO., LTD 4N100-FC 4.0A, 1000V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N100-FC provide excellent RDS(ON), low gate charg

(15 views)

Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology  Fast Switching and High efficiency  100% Avalanche Test

(14 views)

isc N-Channel MOSFET Transistor IXTP44N10T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 30mΩ@VGS=10V ·Fully characterized avalanche volta

(13 views)

IXFN44N100P 1000 V, 220 mΩ PolarTM HiperFETTM Power MOSFET MOSFET Datasheet Pinout Diagram (SOT-227B) baseplate D D G G S* S* S S Features:

(13 views)

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 14.6mΩ ID 40A G UIS, Rg 100% Teste

(12 views)

FQP44N10 December 2000 QFET FQP44N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are p

(12 views)

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 16.5mΩ ID 44A G UIS, Rg 100% Teste

(11 views)

www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol VDS

(11 views)

FDP054N10 — N-Channel PowerTrench® MOSFET FDP054N10 N-Channel PowerTrench® MOSFET 100 V, 144 A, 5.5 mΩ November 2013 Features • RDS(on) = 4.6 mΩ (T

(11 views)

isc N-Channel MOSFET Transistor IXTY1R4N100P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 11.8Ω@VGS=10V ·Fully characterized avalanche vo

(11 views)