4N10 Datasheet | Specifications & PDF Download

UNISONIC TECHNOLOGIES CO., LTD 4N100 Power MOSFET 4A, 1000V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N100 is an N-channel MOSFET, it uses UTC’s

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 14mΩ ID 40A G UIS, Rg 100% Tested

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 14mΩ ID 47A G UIS, Rg 100% Tested

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1000V N-Channel MOSFETs PMF04N100T General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS techn

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UNISONIC TECHNOLOGIES CO., LTD 4N100-FCQ Preliminary 4A, 1000V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 4N100-FCQ provide excellent RDS(ON)

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DATA SHEET www.onsemi.com MOSFET – Power, Single N-Channel 100 V, 3.9 mW, 138 A NVMFWS004N10MC V(BR)DSS 100 V RDS(ON) MAX 3.9 mW @ 10 V ID MAX 138

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 14mΩ ID 40A G UIS, Rg 100% Tested

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    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  100V  D RDSON (MAX.)  14.6mΩ  ID  40A  G   UIS, R

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FQA44N10 December 2000 QFET FQA44N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are p

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FQAF44N10 December 2000 QFET FQAF44N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are

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RFP4N100, RF1S4N100SM Data Sheet August 1999 File Number 2457.4 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs The RFP4N100 and RFP4N1

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www.DataSheet4U.com HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High d

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www.DataSheet4U.com TM HiPerFET Power MOSFETs Q-Class IXFA 4N100Q IXFP 4N100Q VDSS =1000 V = 4 A ID25 RDS(on) = 3.0 W trr £ 250 ns N-Channel Enhanc

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Advance Technical Information HiperFETTM Power MOSFET Q3-Class N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFN44N100Q3 VDSS ID25 RDS(on)

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Silicon N-Channel Power MOSFET CS14N10 A3 ○R General Description： CS14N10 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high dens

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FQH44N10 — N-Channel QFET® MOSFET FQH44N10 N-Channel QFET® MOSFET 100 V, 48 A, 39 mΩ Description This N-Channel enhancement mode power MOSFET is pro

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Rating: 1 ★ (4 votes)

IXFN44N100P 1000 V, 220 mΩ PolarTM HiperFETTM Power MOSFET MOSFET Datasheet Pinout Diagram (SOT-227B) baseplate D D G G S* S* S S Features:

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