isc N-Channel MOSFET Transistor ·FEATURES ·Drai.
4N10 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance :.FQP44N10 - 100V N-Channel MOSFET
FQP44N10 December 2000 QFET FQP44N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are p.FDP054N10 - N-Channel MOSFET
FDP054N10 — N-Channel PowerTrench® MOSFET FDP054N10 N-Channel PowerTrench® MOSFET 100 V, 144 A, 5.5 mΩ November 2013 Features • RDS(on) = 4.6 mΩ (T.CS14N10A3 - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS14N10 A3 ○R General Description: CS14N10 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high dens.AGM14N10A - MOSFET
AGM14N10A ● General Description The AGM14N10A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(O.FDP054N10 - N-Channel MOSFET
isc N-Channel MOSFET Transistor FDP054N10 ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: .4N100 - N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD 4N100 Power MOSFET 4A, 1000V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N100 is an N-channel MOSFET, it uses UTC’s.PJW4N10 - 100V N-Channel MOSFET
PPJW4N10 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 4A SOT-223 Features RDS(ON), VGS@10V,ID@2A<258mΩ RDS(ON), VGS@6V,ID@1A.AGM14N10AP - MOSFET
AGM14N10AP ● General Description The AGM14N10AP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS.1804N104xxx - Multilayer Ceramic Chip Capacitors
Multilayer Ceramic Chip Capacitors Products – NPO, X7R, Y5V HOW TO ORDER 0603 N 101 J 500 N T Packaging Code T = 7” reel/paper tape Termination N = Ag.IXFN24N100F - HiPerRF Power MOSFETs
Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching IXFN 24N100F VDSS ID25 RDS(on) = = = 1000 24 0.39 V A Ω N-Ch.14N101K - Metal Oxide Varistor 14mm Dusc
METAL OXIDE VARISTOR 14mm Disc Part Number Maximum Allowable Voltage ACrms DC (V) (V) Varistor Voltage (V 1mA) Tolerance (V) Range Maximum UL CSA.14N102K - Metal Oxide Varistor 14mm Dusc
METAL OXIDE VARISTOR 14mm Disc Part Number Maximum Allowable Voltage ACrms DC (V) (V) Varistor Voltage (V 1mA) Tolerance (V) Range Maximum UL CSA.14N102K - Metal Oxide Varistor
TMOV 14M(E,N)Series Metal Oxide Varistors Data Sheet Features ·TMOV integrated thermal protection device ·High peak surge current rating up to 6KA ·De.14N101K - Metal Oxide Varistor
TMOV 14M(E,N)Series Metal Oxide Varistors Data Sheet Features ·TMOV integrated thermal protection device ·High peak surge current rating up to 6KA ·De.IXYP24N100A4 - Ultra-Low Vsat PT IGBT
1000V XPTTM GenX4TM IGBT Ultra-Low Vsat PT IGBT for up to 5kHz Switching Advance Technical Information IXYA24N100A4HV IXYP24N100A4 VCES = 1000V IC.IXYA24N100A4HV - Ultra-Low Vsat PT IGBT
1000V XPTTM GenX4TM IGBT Ultra-Low Vsat PT IGBT for up to 5kHz Switching Advance Technical Information IXYA24N100A4HV IXYP24N100A4 VCES = 1000V IC.FQB44N10 - 100V N-Channel MOSFET
FQB44N10 / FQI44N10 June 2000 QFET FQB44N10 / FQI44N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect.ADM24N10E - N-Channel MOSFET
ADV ADM24N10E N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 100V ID 24A RDS(ON) (mΩ) 53mΩ TO252 2 1 2 3 Absolute Max.BRS4N10 - N-CHANNEL MOSFET
BRS4N10 Rev.E Oct.-2016 DATA SHEET / Descriptions TO-92 N MOS 。N-CHANNEL MOSFET in a TO-92 Plastic Package. / Features ,( ROHS), ESD 。 High Re.