isc N-Channel MOSFET Transistor ·FEATURES ·Drai.
Inchange Semiconductor
4N10 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance :.
Fairchild Semiconductor
FDP054N10 - N-Channel MOSFET
FDP054N10 — N-Channel PowerTrench® MOSFET FDP054N10 N-Channel PowerTrench® MOSFET 100 V, 144 A, 5.5 mΩ November 2013 Features • RDS(on) = 4.6 mΩ (T.
Huajing Microelectronics
CS14N10A3 - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS14N10 A3 ○R General Description： CS14N10 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high dens.
Fairchild Semiconductor
FQP44N10 - 100V N-Channel MOSFET
FQP44N10 December 2000 QFET FQP44N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are p.
AGMSEMI
AGM14N10A - MOSFET
AGM14N10A ● General Description The AGM14N10A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(O.
INCHANGE
FDP054N10 - N-Channel MOSFET
isc N-Channel MOSFET Transistor FDP054N10 ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: .
UTC
4N100 - N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD 4N100 Power MOSFET 4A, 1000V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N100 is an N-channel MOSFET, it uses UTC’s.
Pan Jit International
PJW4N10 - 100V N-Channel MOSFET
PPJW4N10 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 4A SOT-223 Features RDS(ON), VGS@10V,ID@2A<258mΩ RDS(ON), VGS@6V,ID@1A.
IXYS
IXYP24N100A4 - Ultra-Low Vsat PT IGBT
1000V XPTTM GenX4TM IGBT Ultra-Low Vsat PT IGBT for up to 5kHz Switching Advance Technical Information IXYA24N100A4HV IXYP24N100A4 VCES = 1000V IC.
IXYS
IXYA24N100A4HV - Ultra-Low Vsat PT IGBT
1000V XPTTM GenX4TM IGBT Ultra-Low Vsat PT IGBT for up to 5kHz Switching Advance Technical Information IXYA24N100A4HV IXYP24N100A4 VCES = 1000V IC.
RFE
14N101K - Metal Oxide Varistor 14mm Dusc
METAL OXIDE VARISTOR 14mm Disc Part Number Maximum Allowable Voltage ACrms DC (V) (V) Varistor Voltage (V 1mA) Tolerance (V) Range Maximum UL CSA.
RFE
14N102K - Metal Oxide Varistor 14mm Dusc
METAL OXIDE VARISTOR 14mm Disc Part Number Maximum Allowable Voltage ACrms DC (V) (V) Varistor Voltage (V 1mA) Tolerance (V) Range Maximum UL CSA.
AGMSEMI
AGM14N10AP - MOSFET
AGM14N10AP ● General Description The AGM14N10AP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS.
IXYS
IXYP24N100C4 - High Speed IGBT
1000V XPTTM GenX4TM IGBT High Speed IGBT for 20-50kHz Switching Advance Technical Information IXYA24N100C4HV IXYP24N100C4 VCES = 1000V IC110 = 24A.
IXYS
IXYA24N100C4HV - High Speed IGBT
1000V XPTTM GenX4TM IGBT High Speed IGBT for 20-50kHz Switching Advance Technical Information IXYA24N100C4HV IXYP24N100C4 VCES = 1000V IC110 = 24A.
Excelliance MOS
EMD14N10CS - MOSFET
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 14mΩ ID 40A G UIS, Rg 100% Tested .
Excelliance MOS
EMB14N10CS - MOSFET
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 14.6mΩ ID 62A G UIS, R.
Excelliance MOS
EMD14N10H - MOSFET
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 14mΩ ID 47A G UIS, Rg 100% Tested .
Excelliance MOS
EMB14N10F - MOSFET
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 14.6mΩ ID 40A G UIS, R.
Fairchild Semiconductor
FQB44N10 - 100V N-Channel MOSFET
FQB44N10 / FQI44N10 June 2000 QFET FQB44N10 / FQI44N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect.
