4N60-R Datasheet | Specifications & PDF Download

ISA04N60A N-Channel MOSFET Pb Lead Free Package and Finish Applications: • Adaptor • TV Main Power • SMPS Power Supply • LCD Panel Power VDSS 600

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isc N-Channel MOSFET Transistor 4N60 DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minim

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SLP4N60C / SLF4N60C SLP4N60C/SLF4N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stri

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SEMICONDUCTOR 4N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (4A, 600Volts) DESCRIPTION The Nell 4N60 is a three-terminal sili

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MDP4N60/MDF4N60 N-channel MOSFET 600V MDP4N60/MDF4N60 N-Channel MOSFET 600V, 4.6A, 2.0Ω General Description These N-channel MOSFET are produced usin

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SVF4N60D/F/FG/T/K/M/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60D/F/FG/T/K/M/MJ is an N-channel enhancement mode power MOS field

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600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology. This latest technology has been

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MDF4N60B N-channel MOSFET 600V MDF4N60B N-Channel MOSFET 600V, 4.6A, 2.0Ω General Description These N-channel MOSFET are produced using advanced Mag

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4N60/F4N60/I4N60/E4N60/B4N60/D4N60 4A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by t

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SAMWIN TO-251 TO-252 TO-220F SW4N60B N-channel I-PAK/D-PAK/TO-220F MOSFET BVDSS : 600V ID 1 Features ■ High ruggedness ■ RDS(ON) (Max 2.5 Ω)@VGS=10V

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UNISONIC TECHNOLOGIES CO., LTD 14N60-TC 14A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 14N60-TC are N-Channel enhancement mode power field eff

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FTP04N60D FTA04N60D N-Channel MOSFET Pb Lead Free Package and Finish Applications: • Adaptor • Charger • SMPS Standby Power Features: • RoHS Compli

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4A, 600V, N FQP4N60C FQPF4N60C H4N60P H4N60F 4N60 H HAOHAI P: TO-220AB F: TO-220FP 50Pcs 4N60 Series N-Channel MOSFET 1000Pcs

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SPW24N60C3 CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extre

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63'1 & 6381 & &RRO026Œ 3RZHU7UDQVLVWRU )HDWXUH • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH VDS#Tjmax  9 5'6

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STF24N60M2 Datasheet N-channel 600 V, 168 mΩ typ., 18 A MDmesh M2 Power MOSFET in a TO-220FP package Features Order code VDS @TJmax RDS(on) max.

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4N60/F4N60/I4N60/E4N60/B4N60/D4N60 4A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by t

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Pyramis Corporation “The Silicon System Solutions Company” Applications: • Adaptor • Charger • SMPS Standby Power • LCD Panel Power Features: • Low ON

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