4A, 600V, N【】 FQU4N60 FQD4N60 H H4N60I .
HAOHAI
4N60S - N-Channel MOSFET
4A, 600V, N【】 FQU4N60 FQD4N60 H H4N60I H4N60S 4N60 HAOHAI N-Channel Power Field Effect Transistoe SGS, RoHS TO-251 TO-252 IS TO-251 TO.
SeCoS
SSE04N60SL - N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente SSE04N60SL 4A , 600V , RDS(ON) 2.4Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies h.
Maple Semiconductor
SLU4N60S - N-Channel MOSFET
SLD4N60S/SLU4N60S SLD4N60S/SLU4N60S 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe.
Maple Semiconductor
SLP4N60S - N-Channel MOSFET
SLP4N60S/SLF4N60S SLP4N60S/SLF4N60S 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe.
Diodes
DMG4N60SJ3 - N-Channel MOSFET
NEW PRODUCT DMG4N60SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS (@ TJ Max) 650V RDS(ON) Max 2.5 @ VGS = 10V ID TC = +25°C 3.0A D.
Diodes
DMG4N60SK3 - N-Channel MOSFET
OBSOLETE – PART DISCONTINUED PART OBSOLETE - CONTACT US DMG4N60SK3 Green 600V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS (@ TJ Ma.
Diodes
DMG4N60SCT - N-Channel MOSFET
OBSOLETE – PART DISCONTINUED PART OBSOLETE - CONTACT US DMG4N60SCT Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS (@ TJ Max) 650V .
JILIN SINO-MICROELECTRONICS
JCS4N60SB - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS4N60B MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson（Vgs=10V） 2.4Ω Qg 18.1nC LED APPLICATIO.
Infineon
SPU04N60S5 - Cool MOS Power Transistor
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate.
Infineon
SPN04N60S5 - Cool MOS Power Transistor
SPN04N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in SOT 223 VDS RDS(on) ID 600 0.9.
Infineon
SPD04N60S5 - Cool MOS Power Transistor
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate.
Infineon
SPB04N60S5 - Cool MOS Power Transistor
SPP04N60S5 SPB04N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rate.
Infineon
SPP04N60S5 - Power Transistor
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate.
Infineon Technologies
SPDU04N60S5 - Cool MOS Power Transistor
SPU04N60S5 SPD04N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rate.
Advanced Power Electronics
AP04N60S-H-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP04N60S-H-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement .
Compact
CF4N60S - MOSFET
CF4N60S DESCRIPTION • Electronic Ballast • Electronic Transformer • Switch Mode Power Supply 1-GATE 2-DRAIN 3-SOURCE FEATURES • Low Thermal Resi.
SeCoS
SSRF04N60SL - N-Channel MOSFET
Elektronische Bauelemente SSRF04N60SL 4A , 600V , RDS(ON) 2.4Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies .
INCHANGE
SPU04N60S5 - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot v.
INCHANGE
SPB04N60S5 - N-Channel MOSFET
Isc N-Channel MOSFET Transistor SPB04N60S5 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·.
INCHANGE
SPD04N60S5 - N-Channel MOSFET
isc N-Channel MOSFET Transistor SPD04N60S5,ISPD04N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.95Ω ·Enhancement mode: ·100% avalanch.
