4N60S Datasheet | Specifications & PDF Download

4A, 600V, N【】 FQU4N60 FQD4N60 H H4N60I H4N60S 4N60 HAOHAI N-Channel Power Field Effect Transistoe　 SGS, RoHS TO-251 TO-252 IS TO-251 TO

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OBSOLETE – PART DISCONTINUED PART OBSOLETE - CONTACT US DMG4N60SK3 Green 600V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS (@ TJ Ma

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N R N-CHANNEL MOSFET JCS4N60B MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson（Vgs=10V） 2.4Ω Qg 18.1nC    LED APPLICATIO

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SPN04N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in SOT 223 VDS RDS(on) ID 600 0.9

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AP04N60S-H-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement

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SLP4N60S/SLF4N60S SLP4N60S/SLF4N60S 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe

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OBSOLETE – PART DISCONTINUED PART OBSOLETE - CONTACT US DMG4N60SCT Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS (@ TJ Max) 650V

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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate

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SPP04N60S5 SPB04N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rate

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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate

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SPU04N60S5 SPD04N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rate

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isc N-Channel MOSFET Transistor SPP04N60S5，ISPP04N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.95Ω ·Enhancement mode ·Fast Switchin

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 3.7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance :

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 4.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance

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SLD4N60S/SLU4N60S SLD4N60S/SLU4N60S 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe

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NEW PRODUCT DMG4N60SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS (@ TJ Max) 650V RDS(ON) Max 2.5 @ VGS = 10V ID TC = +25°C 3.0A D

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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate

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Elektronische Bauelemente SSE04N60SL 4A , 600V , RDS(ON) 2.4Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies h

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