4N60S Datasheet | Specifications & PDF Download

SM4N60S 600V N-Channel MOSFET TO-220 SM4N60S KONGSON Features: □ Low Intrinsic Capacitances. □ Excellent Switching Characteristics. □ Extended Safe

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 3.7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance

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CF4N60S DESCRIPTION • Electronic Ballast • Electronic Transformer • Switch Mode Power Supply 1-GATE 2-DRAIN 3-SOURCE FEATURES • Low Thermal Resi

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OBSOLETE – PART DISCONTINUED PART OBSOLETE - CONTACT US DMG4N60SK3 Green 600V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS (@ TJ Ma

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N R N-CHANNEL MOSFET JCS4N60B MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson（Vgs=10V） 2.4Ω Qg 18.1nC    LED APPLICATIO

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot v

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Isc N-Channel MOSFET Transistor SPB04N60S5 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·

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isc N-Channel MOSFET Transistor SPP04N60S5，ISPP04N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.95Ω ·Enhancement mode ·Fast Switchin

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 4.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance

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OBSOLETE – PART DISCONTINUED PART OBSOLETE - CONTACT US DMG4N60SCT Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS (@ TJ Max) 650V

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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate

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SPN04N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in SOT 223 VDS RDS(on) ID 600 0.9

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isc N-Channel MOSFET Transistor SPD04N60S5,ISPD04N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.95Ω ·Enhancement mode: ·100% avalanch

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4A, 600V, N【】 FQU4N60 FQD4N60 H H4N60I H4N60S 4N60 HAOHAI N-Channel Power Field Effect Transistoe　 SGS, RoHS TO-251 TO-252 IS TO-251 TO

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NEW PRODUCT DMG4N60SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS (@ TJ Max) 650V RDS(ON) Max 2.5 @ VGS = 10V ID TC = +25°C 3.0A D

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance :

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SPU04N60S5 SPD04N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rate

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AP04N60S-H-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement

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SM4N60S-I/SM4N60S-D 600V N-Channel MOSFET SM4N60S-I SM4N60S-D SM4N60S-I/SM4N60S-D KONGSON Features: □ Low Intrinsic Capacitances. □ Excellent Swit

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