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4N65-U Datasheet, Features, Application

4N65-U N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 4N65-U 4A, 650V N-C.

PINGWEI

4N65F - N-Channel MOSFET

4N65(F,B,H,G,D) 4A mps,650 Volts N-CHANNEL MOSFET FEATURE  4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A  Low gate charge  Low Ciss  Fast switching  100% ava.
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Inchange Semiconductor

4N65 - N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Fast Switching Speed ·Minimum Lot.
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JILIN SINO-MICROELECTRONICS

JCS4N65B - N-CHANNEL MOSFET

R N N-CHANNEL MOSFET JCS4N65B MAIN CHARACTERISTICS Package ID VDSS Rdson (@Vgs=10V) Qg z z z UPS 4.0 A 6R 0 V 2.R Ω 13.3nC APPLICATIONS z .
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IPS

ITA04N65R - N-Channel MOSFET

ITA04N65R N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 650V Lead Free Package and Finish RDS(ON)(Typ.) 2.4Ω ID 4A Features: ● .
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SL

SVF4N65F - N-channel MOSFET

SVF4N65T/F(G)/M_Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65T/F(G)/M is an N-channel enhancement mode power MOS field effect transi.
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SamHop Microelectronics

SDD04N65 - N-Channel MOSFET

Green SDU/D04N65 Product SamHop Microelectronics corp. Ver 2.3 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDS.
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INCHANGE

IXTP34N65X2 - N-Channel MOSFET

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤ 96mΩ@VGS= 10V ·Fast.
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PINGWEI

4N65B - N-Channel MOSFET

4N65(F,B,H,G,D) 4A mps,650 Volts N-CHANNEL MOSFET FEATURE  4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A  Low gate charge  Low Ciss  Fast switching  100% ava.
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Silan Microelectronics

SVS4N65MJ - TRANSISTOR

Silan Microelectronics SVS4N65F/MJ/D_Datasheet 4A, 650V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS4N65F/MJ/D is an N-channel enhancement mode .
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SL

SVF4N65CAF - 650V N-CHANNEL MOSFET

SVF4N65CAF/D/M/MJ/MN/K _Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65CAF/D/M/MJ/MN/K is an N-channel enhancement mode power MOS fiel.
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Unisonic Technologies

4N65-E - N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 4N65-E 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-E is a high voltage power MOSFET designed to have bet.
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Unisonic Technologies

4N65-U - N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 4N65-U 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-U is a high voltage power MOSFET designed to have be.
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Unisonic Technologies

4N65-C - N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 4N65-C 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-C is a high voltage power MOSFET designed to have bet.
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Jingdao

CM4N65C - POWER MOSFET

R ShenZhen Jingdao Electronic Co.,Ltd. 650V N-Channel VDMOS RoHS POWER MOSFET l l TO-251/252 TO-251 TO-252 Tamb= 25 - (Ta=25 ) Tamb= 25 VDSS ID .
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Oucan Semi

FQP4N65 - 4A N-Channel MOSFET

FQP4N65/FQPF4N65 650V,4A N-Channel MOSFET General Description Product Summary The FQP4N65 & FQPF4N65 have been fabricated using an advanced high vo.
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INCHANGE

IXTY4N65X2 - N-Channel MOSFET

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 850mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
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PINGWEI

4N65 - N-Channel MOSFET

4N65(F,B,H,G,D) 4A mps,650 Volts N-CHANNEL MOSFET FEATURE  4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A  Low gate charge  Low Ciss  Fast switching  100% ava.
1.0 · rating-1
JILIN SINO-MICROELECTRONICS

JCS4N65R - N-CHANNEL MOSFET

R JCS4N65C MAIN CHARACTERISTICS ID VDSS Rdson_ Typ ( Vgs=1 0V) Max Qg-typ 4.0 A 650 V 2.1Ω 2.6Ω 14nC Package JCS4N65C    LED AP.
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Vishay

SiHG44N65EF - Power MOSFET

www.vishay.com SiHG44N65EF Vishay Siliconix E Series Power MOSFET with Fast Body Diode TO-247AC D G S D G S N-Channel MOSFET PRODUCT SUMMARY .
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Winsemi

WFU4N65S - Power MOSFET

WFU4N65S Product Description 650V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg =13nC) � 100% UIS tested � R.
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