4N80 Datasheet | Specifications & PDF Download

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB4N80E1/D Product Preview TMOS E-FET .™ High Energy Power FET D 2 PAK-SL Straight L

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 4N80 DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Fast

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV

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AP04N80I-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼

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MegaMOSTMFET N-Channel Enhancement Mode IXTH 14N80 VDSS = 800 V ID25 = 14 A RDS(on) = 0.70 Ω Symbol Test Conditions VDSS V DGR VGS VGSM ID25 IDM

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 800V D RDSON (MAX.) 3.0Ω ID 4A G UIS, 100% Tested S

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May 2009 PFP4N80 / PFF4N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances 

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DTP4N80/DTP4N80F/DTU4N80/DTL4N80 Power MOSFET www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 8

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HiPerFETTM Power MOSFETs Single MOSFET Die Avalanche Rated Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg

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SEMICONDUCTOR 4N80 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET DESCRIPTION (4A, 800Volts) The Nell 4N80 is a three-terminal

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Silicon N-Channel Power MOSFET CS4N80 A3HD ○R General Description： CS4N80 A3HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP4N80/

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP4N80/

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP4N80/

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP4N80/

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www.DataSheet4U.com PolarHV HiPerFET Power MOSFET Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TM IXFR

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Power MOSFET HiPerFETTM Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN44N80 Symbol VDSS VDGR VGSS VGSM ID25

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV

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CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accor

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