4N80 Datasheet | Specifications & PDF Download

May 2009 PFP4N80 / PFF4N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances 

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB4N80E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Des

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV

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May 2009 PFP4N80 / PFF4N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances 

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HiPerFETTM Power MOSFETs Single MOSFET Die Avalanche Rated Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg

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CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accor

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Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated IXFN44N80Q3 Symbol VDSS VDGR VGSS VGSM ID25 IDM

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www.DataSheet4U.com HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) Single MOSFET Die Avalanche Rated Preliminary Data Sheet S

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high volt

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB4N80E1/D Product Preview TMOS E-FET.™ High Energy Power FET D2PAK-SL Straight Lead

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 24N80P IXFK 24N80P IXFT 24N80P VDSS = 800 V ID2

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH14N80 IXFH15N80 ID25 RDS(on) 0.70 W 0.60 W 800 V

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Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFK44N80Q3 IXFX44N80Q3 D G S Symbol VDSS VDGR

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N R N-CHANNEL MOSFET JCS4N80C MAIN CHARACTERISTICS Package ID 4A VDSS 800 V Rdson-max（@Vgs=10V） 2.6Ω Qg-typ 29.5nC   APPLICATION

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HiPerFETTM Power MOSFETs Single MOSFET Die Avalanche Rated Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg

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