4N80-N Datasheet | Specifications & PDF Download

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB4N80E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Des

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH14N80 IXFH15N80 ID25 RDS(on) 0.70 W 0.60 W 800 V

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HiPerFETTM Power MOSFETs Single MOSFET Die Avalanche Rated Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP4N80/

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP4N80/

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www.DataSheet4U.com HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) Single MOSFET Die Avalanche Rated Preliminary Data Sheet S

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PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGS VGSM ID25 IDM IAR E

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB4N80E1/D Product Preview TMOS E-FET .™ High Energy Power FET D 2 PAK-SL Straight L

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CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accor

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MegaMOSTMFET N-Channel Enhancement Mode IXTH 14N80 VDSS = 800 V ID25 = 14 A RDS(on) = 0.70 Ω Symbol Test Conditions VDSS V DGR VGS VGSM ID25 IDM

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Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFK44N80Q3 IXFX44N80Q3 D G S Symbol VDSS VDGR

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N R N-CHANNEL MOSFET JCS4N80C MAIN CHARACTERISTICS Package ID 4A VDSS 800 V Rdson-max（@Vgs=10V） 2.6Ω Qg-typ 29.5nC   APPLICATION

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DTP4N80/DTP4N80F/DTU4N80/DTL4N80 Power MOSFET www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 8

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 4N80 DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Fast

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB4N80E1/D Product Preview TMOS E-FET.™ High Energy Power FET D2PAK-SL Straight Lead

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP4N80/

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www.DataSheet4U.com PolarHV HiPerFET Power MOSFET Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TM IXFR

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HiPerFETTM Power MOSFETs ISOPLUS264TM (Electrically Isolated Backside) Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t

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