UNISONIC TECHNOLOGIES CO., LTD 4N80-N 4.0A, 800V N.
4N80 - N-Channel Power MOSFET
SEMICONDUCTOR 4N80 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET DESCRIPTION (4A, 800Volts) The Nell 4N80 is a three-terminal .SSS4N80AS - Straight 1-Row BergStik II Headers
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.SSP4N70 - (SSP4N70 / SSP4N80) N-Channel Power MOSFETs
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www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Cha.APT34N80B2C3 - Super Junction MOSFET
APT34N80B2C3 APT34N80LC3 800V 34A 0.145Ω Super Junction MOSFET C O OLMOS Power Semiconductors T-MAX™ TO-264 • Ultra low RDS(ON) • Low Miller Capac.AP04N80I-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP04N80I-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ .04N80C3 - Power Transistor
CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accor.KF4N80F - N-CHANNEL MOS FIELD EFFECT TRANSISTOR
SEMICONDUCTOR TECHNICAL DATA General Description A KF4N80F N CHANNEL MOS FIELD EFFECT TRANSISTOR C F This planar stripe MOSFET has better character.4N80-N - N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 4N80-N 4.0A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N80-N is a N-channel mode power MOSFET using UTC’s adva.JCS4N80H - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS4N80H MAIN CHARACTERISTICS Package ID VDSS Rdson-max (@Vgs=10V) Qg-typ z z z LED 4A 800 V 2.5 Ω 14nC APPLICATIONS z.JCS4N80V - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS4N80C MAIN CHARACTERISTICS Package ID 4A VDSS 800 V Rdson-max(@Vgs=10V) 2.6Ω Qg-typ 29.5nC APPLICATION.JCS4N80V - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS4N80C MAIN CHARACTERISTICS Package ID 4A VDSS 800 V Rdson-max(@Vgs=10V) 2.6Ω Qg-typ 29.5nC APPLICATION.JCS4N80R - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS4N80C MAIN CHARACTERISTICS Package ID 4A VDSS 800 V Rdson-max(@Vgs=10V) 2.6Ω Qg-typ 29.5nC APPLICATION.SVF4N80F - 800V N-CHANNEL MOSFET
SVF4N80F/D/MJ/K_Datasheet 4A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N80F/D/MJ/K is an N-channel enhancement mode power MOS field effect transi.PFP4N80 - N-Channel MOSFET
May 2009 PFP4N80 / PFF4N80 FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances .PFF4N80 - N-Channel MOSFET
May 2009 PFP4N80 / PFF4N80 FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances .FQP4N80 - 800V N-Channel MOSFET
FQP4N80 September 2000 QFET FQP4N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr.DTP4N80F - Power MOSFET
DTP4N80/DTP4N80F/DTU4N80/DTL4N80 Power MOSFET www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 8.IXFH14N80 - Power MOSFET
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH14N80 IXFH15N80 ID25 RDS(on) 0.70 W 0.60 W 800 V .