4N80-N Datasheet | Specifications & PDF Download

SEMICONDUCTOR 4N80 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET DESCRIPTION (4A, 800Volts) The Nell 4N80 is a three-terminal

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CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accor

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SVF4N80F/D/MJ/K_Datasheet 4A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N80F/D/MJ/K is an N-channel enhancement mode power MOS field effect transi

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May 2009 PFP4N80 / PFF4N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances 

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SEMICONDUCTOR TECHNICAL DATA General Description A KF4N80F N CHANNEL MOS FIELD EFFECT TRANSISTOR C F This planar stripe MOSFET has better character

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FQP4N80 September 2000 QFET FQP4N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr

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UNISONIC TECHNOLOGIES CO., LTD 4N80 4.0A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET using UTC’s advance

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SAMWIN SW4N80B N-channel TO-220F MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 4Ω)@VGS=10V ■ Gate Charge (Typical 14nC) ■ Improved dv/dt Capabil

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HiPerFETTM Power MOSFETs Single MOSFET Die Avalanche Rated Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg

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Silan Microelectronics SVS4N80D/T_Datasheet 4A, 800V DP MOS POWER TRANSISTOR DESCRIPTION SVS4N80D is an N-channel enhancement mode high voltage pow

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STB14N80K5 N-channel 800 V, 0.400 Ω typ., 12 A MDmesh™ K5 Power MOSFET in a D²PAK package Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Inte

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UNISONIC TECHNOLOGIES CO., LTD 4N80-FC 4.0A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N80-FC provide excellent RDS(ON), low gate charge and

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UNISONIC TECHNOLOGIES CO., LTD 4N80-FCQ 4.0A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N80-FCQ provide excellent RDS(ON), low gate charge an

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CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accor

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May 2009 PFP4N80 / PFF4N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances 

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 24N80P IXFK 24N80P IXFT 24N80P VDSS = 800 V ID2

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MegaMOSTMFET N-Channel Enhancement Mode IXTH 14N80 VDSS = 800 V ID25 = 14 A RDS(on) = 0.70 Ω Symbol Test Conditions VDSS V DGR VGS VGSM ID25 IDM

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