.
Silan
302
40N60NPFD - 600V FIELD STOP IGBT
SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu.
ETC
242
30J127 - 600V 200A IGBT MOSFET
MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient.
Fairchild Semiconductor
149
G40N60 - Ultrafast IGBT
SGH40N60UFD SGH40N60UFD Ultra-Fast IGBT IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low .
Intersil Corporation
129
20N60C3 - N-Channel IGBT
Data Sheet HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S January 2000 File Number 4492.2 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated hig.
TRinno
124
TGAN20N135FD - Field Stop Trench IGBT
Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio.
HP
122
HCPL-3150 - 0.5 Amp Output Current IGBT Gate Drive Optocoupler
H 0.5 Amp Output Current IGBT Gate Drive Optocoupler Technical Data HCPL-3150 Features • 0.5 A Minimum Peak Output Current • 15 kV/µs Minimum Commo.
Silan Microelectronics
116
60N60FD1 - 600V FIELD-STOP IGBT
Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog.
Fairchild Semiconductor
106
FGD4536 - 360V PDP IGBT
FGD4536 — 360 V PDP Trench IGBT September 2013 FGD4536 360 V PDP Trench IGBT Features • • • • • High Current Capability Low Saturation Voltage: VCE(.
Renesas
103
RJP30H2A - Silicon N-Channel IGBT
Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Features T.
AVAGO
102
ACPL-T350 - 2.5 Amp Output Current IGBT Gate Driver Optocoupler
ACPL-T350 2.5 Amp Output Current IGBT Gate Driver Optocoupler with Low ICC Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant op.
Infineon
96
H20R1203 - Reverse conducting IGBT
ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW20N120R3 Datasheet IndustrialPowerControl IHW20N120R3 ResonantSw.
Infineon Technologies
95
K75T60 - IGBT
IKW75N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr.
Silan Microelectronics
90
SGT60N60FD1PN - 600V FIELD-STOP IGBT
Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog.
MagnaChip
86
MBQ60T65PES - High Speed Fieldstop Trench IGBT
MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation General Description Th.
Infineon Technologies
85
K50H603 - IGBT
IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology withsoft,fastrecoveryanti-paralleldiode IKW50N60H3 600Vhighspeedswitchingser.
IXYS
84
30N60 - High speed IGBT
Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A VCES 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions.
Infineon Technologies
83
K25H1203 - IGBT
! ' $ ( ## # ! " # # $ %&% + !)* + ,!- !. # $ %% /' $# 0+* /# *. /0 $ %&% ' $ ( ## # / 1 21 1 3 1 4 5+ /6 #% 7* *+ % # / 8(% # # 9) , 1 # / 1 # .
Hynix Semiconductor
80
H9TQ17ABJTMCUR - 16GB eNAND (x8) / LPDDR3 16Gb(x32)
CI-MCP Specification 16GB eNAND (x8) + 16Gb LPDDR3 (x32) This document is a general product description and is subject to change without notice. SK h.
ON Semiconductor
78
FGH60N60 - IGBT
IGBT - Field Stop 600 V, 60 A FGH60N60SMD Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generati.
Infineon
74
K30H603 - IGBT
IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology withsoft,fastrecoveryanti-paralleldiode IKW30N60H3 600Vhighspeedswitchingse.