5N80 Datasheet | Specifications & PDF Download

SAMWIN SW5N80 N-channel MOSFET Features TO-220F ■ High ruggedness ■ RDS(ON) (Max 1.8 Ω)@VGS=10V ■ Gate Charge (Typ 26nC) ■ Improved dv/dt Capabil

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PRECISION 2.45 VOLT VOLTAGE REFERENCE ISSUE 3 — MARCH 1998 ZRA245 FEATURES DEVICE DESCRIPTION The ZRA245 uses a bandgap circuit design to achieve a

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FQP5N80 FQP5N80 800V N-Channel MOSFET September 2000 QFETTM General Description These N-Channel enhancement mode power field effect transistors are

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FKPF5N80 www.DataSheet4U.com FKPF5N80 Application Explanation • • • • Switching mode power supply, light dimmer, electric flasher unit TV sets, ster

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UNISONIC TECHNOLOGIES CO., LTD 5N80 5.0A, 800V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 5N80 is a N-channel enhancement mode power MOSFET. It

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STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 N-channel 800 V, 0.3 Ω typ., 14 A MDmesh™ K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packag

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STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 N-channel 800 V, 0.3 Ω typ., 14 A MDmesh™ K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packag

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Main Product Characteristics: VCES 700V IC 80A VCE(sat) 1.6V GC E TO - 247 Features and Benefits: ◼ Trench FS technology offering ◼ High spee

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Main Product Characteristics: VCES 700V IC VCE(sat) 80A 1.58V G CE TO – 247Plus-3L Features and Benefits: ◼ Trench FS technology offering ◼ High

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Shantou Huashan Electronic Devices Co.,Ltd. HFP5N80 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel en

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Features � 4.5A,800V,RDS(on)(Max2.5Ω)@VGS=10V � Ultra-low Gate charge(Typical 14nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junct

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CMP75N80/CMB75N80/CMI75N80 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summery The 75N80 is N-Channel MOSFET, It

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FQB5N80 / FQI5N80 September 2000 QFET FQB5N80 / FQI5N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effec

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FQB5N80 / FQI5N80 September 2000 QFET FQB5N80 / FQI5N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effec

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FQP5N80 September 2000 QFET FQP5N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH14N80 IXFH15N80 ID25 RDS(on) 0.70 W 0.60 W 800 V

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isc N-Channel MOSFET Transistor 5N80 ·DESCRIPTION ·Drain Current ID= 5.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Fast Switching Speed ·Min

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SFF15N80/3 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SOLID ST

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www.DataSheet4U.com Not for New Designs VDSS ID25 27 A 25 A 27 A 25 A RDS(on) 0.30 0.35 0.30 0.35 Ω Ω Ω Ω HiPerFETTM Power MOSFETs N-Channel Enhance

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www.DataSheet4U.com

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