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5N80 Datasheet, Features, Application

5N80 N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor 5N80 ·DESCRIPTI.

Unisonic Technologies

5N80 - N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 5N80 5.0A, 800V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 5N80 is a N-channel enhancement mode power MOSFET. It.
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Fairchild Semiconductor

P5N80 - FQP5N80

FQP5N80 FQP5N80 800V N-Channel MOSFET September 2000 QFETTM General Description These N-Channel enhancement mode power field effect transistors are.
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Cmos

CMP75N80 - N-Channel Enhancement Mode Field Effect Transistor

CMP75N80/CMB75N80/CMI75N80 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summery The 75N80 is N-Channel MOSFET, It.
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Fairchild Semiconductor

FQPF5N80 - 800V N-Channel MOSFET

FQPF5N80 September 2000 QFET FQPF5N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are .
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Inchange Semiconductor

5N80 - N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor 5N80 ·DESCRIPTION ·Drain Current ID= 5.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Fast Switching Speed ·Min.
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TIANJIN HUANXIN TECHNOLOGY

HX5N80 - N-Channel MOSFET

HX5N80 4.8 Amps,800Volts N-Channel MOSFET ■ Description The HX5N80(C) N-Channel enhancement mode silicon gate power MOSFET is designed for high voltag.
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Good-Ark

SSFP5N80 - StarMOS Power MOSFET

SSFP5N80 StarMOST Power MOSFET ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ G.
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STMicroelectronics

STB25N80K5 - N-channel Power MOSFET

STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 N-channel 800 V, 0.19 Ω typ., 19.5 A MDmesh™ K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 pac.
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STMicroelectronics

STF25N80K5 - N-channel Power MOSFET

STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 N-channel 800 V, 0.19 Ω typ., 19.5 A MDmesh™ K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 pac.
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STMicroelectronics

STP25N80K5 - N-channel Power MOSFET

STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 N-channel 800 V, 0.19 Ω typ., 19.5 A MDmesh™ K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 pac.
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STMicroelectronics

STW25N80K5 - N-channel Power MOSFET

STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 N-channel 800 V, 0.19 Ω typ., 19.5 A MDmesh™ K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 pac.
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Infineon Technologies

SPW55N80C3 - MOSFET

! "# $ %& '&0 ()* 0 ( 11 0 # . 311 ./ # # .# " 2 * % 4& & % 1 . 5 !% 0 0 8 .# 1 09 0 2+ 0= 0= 6 # .# % . %7 * 12 6 . :" 1 .< $ 8 . #. %1 # ;5.
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SemiHow

HFP5N80 - N-Channel MOSFET

HFP5N80 May 2013 HFP5N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ ȍ ID = 5.0 A FEATURES ‰ Originative New Design ‰ Superior Avalanche.
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SemiHow

HFS5N80 - N-Channel MOSFET

HFS5N80 May 2013 HFS5N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ ȍ ID = 5.0 A FEATURES ‰ Originative New Design ‰ Superior Avalanche.
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STMicroelectronics

STW65N80K5 - N-CHANNEL MOSFET

STW65N80K5 N-channel 800 V, 0.07 Ω typ., 46 A MDmesh™ K5 Power MOSFET in a TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Interna.
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HUASHAN ELECTRONIC

HFP5N80 - N-Channel Enhancement Mode Field Effect Transistor

Shantou Huashan Electronic Devices Co.,Ltd. HFP5N80 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel en.
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Winsemi

WFF5N80 - Silicon N-Channel MOSFET

Features � 4.5A,800V,RDS(on)(Max2.5Ω)@VGS=10V � Ultra-low Gate charge(Typical 14nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junct.
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Winsemi

WFP5N80 - Silicon N-Channel MOSFET

Features � 4.5A,800V,RDS(on)(Max2.5Ω)@VGS=10V � Ultra-low Gate charge(Typical 14nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junct.
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JCET

CJP85N80 - N-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L-C Plastic-Encapsulate MOSFETS CJP85N80 N-Channel Power MOSFET V(BR)DSS 85V RDS(on)MAX .
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SEMIPOWER

SW5N80 - MOSFET

SAMWIN SW5N80 N-channel MOSFET Features TO-220F ■ High ruggedness ■ RDS(ON) (Max 1.8 Ω)@VGS=10V ■ Gate Charge (Typ 26nC) ■ Improved dv/dt Capabil.
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