5N80 Datasheet | Specifications & PDF Download

FBM85N80P/B FBM@ N-Channel Enhancement Mode MOSFET Features • 80V/90A RDS(ON) = 7.0 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugg

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SSS5N80-VB www.VBsemi.com SSS5N80-VB Datasheet N-Channel 800V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC

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SWF5N80-VB www.VBsemi.com SWF5N80-VB Datasheet N-Channel 800V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC

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CMP75N80/CMB75N80/CMI75N80 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summery The 75N80 is N-Channel MOSFET, It

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FBM85N80P/B FBM@ N-Channel Enhancement Mode MOSFET Features • 80V/90A RDS(ON) = 7.0 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugg

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SSS5N80A-VB www.VBsemi.com SSS5N80A-VB Datasheet N-Channel 800V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (

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SSS5N80C-VB www.VBsemi.com SSS5N80C-VB Datasheet N-Channel 800V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (

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HX5N80 4.8 Amps，800Volts N-Channel MOSFET ■ Description The HX5N80(C) N-Channel enhancement mode silicon gate power MOSFET is designed for high voltag

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UNISONIC TECHNOLOGIES CO., LTD 5N80 5.0A, 800V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 5N80 is a N-channel enhancement mode power MOSFET. It

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UNISONIC TECHNOLOGIES CO., LTD 5N80-CQ 5A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N80-CQ is a high voltage power MOSFET combines advanced

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isc N-Channel MOSFET Transistor 5N80 ·DESCRIPTION ·Drain Current ID= 5.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Fast Switching Speed ·Min

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FKPF5N80 www.DataSheet4U.com FKPF5N80 Application Explanation • • • • Switching mode power supply, light dimmer, electric flasher unit TV sets, ster

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MOSFET TO220F Package MFT-T22F series FEATURE  Operating and Storage Temperature: -55°C ~ +150°C  Fast Switching Characteristics  Improved dv/dt

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IXFH15N80Q-VB www.VBsemi.com IXFH15N80Q-VB Datasheet N-Channel 800 V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on)

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FQP5N80 FQP5N80 800V N-Channel MOSFET September 2000 QFETTM General Description These N-Channel enhancement mode power field effect transistors are

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STFU15N80K5 Datasheet N-channel 800 V, 300 mΩ typ., 14 A MDmesh K5 Power MOSFET in a TO-220FP ultra narrow leads package 3 12 TO-220FP ultra narrow l

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS CJP75N80 N-Channel Power MOSFET General Description The CJ75N80

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Main Product Characteristics: VCES 700V IC VCE(sat) 80A 1.58V G CE TO – 247Plus-3L Features and Benefits: ◼ Trench FS technology offering ◼ High

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STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 N-channel 800 V, 0.19 Ω typ., 19.5 A MDmesh™ K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 pac

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