60N10 Datasheet | Specifications & PDF Download

JCS60N10I N N-CHANNEL MOSFET MAIN CHARACTERISTICS Package ID VDSS R(-d@sVogns=-1m0aVx） Qg-typ  DC/DC      Rdson    dv/dt 

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FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE

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P60N10-VB P60N10-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.017 at VGS = 10 V ID

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor 60N10 ·FEATURES ·Drain Current ID= 60A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Fast

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GigaMOSTM Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFN360N10T VDSS ID25 RDS(on) trr = =

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PFP160N10S / PFB160N10S FEATURES  100% EAS Test  Super high density cell design  Extremely Low Intrinsic Capacitances  Remarkable Switching Chara

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PFP160N10S / PFB160N10S FEATURES  100% EAS Test  Super high density cell design  Extremely Low Intrinsic Capacitances  Remarkable Switching Chara

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ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 60N10 ISOPLUS220TM Electrically Isolated Back Surface VDSS = 100 V ID25 = 60 A RDS(on) = 16.4

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Preliminary Technical Information GigaMOSTM Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK360N1

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() CRST060N10N, CRSS057N10N SkyMOS1 N-MOSFET 100V, 5.3mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS

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OM55N10SC OM60N10SC OM75N05SC OM75N06SC OM55N10SA OM75N05SA OM75N06SA LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V, 60V, An

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JCS60N10I N N-CHANNEL MOSFET MAIN CHARACTERISTICS Package ID VDSS R(-d@sVogns=-1m0aVx） Qg-typ  DC/DC      Rdson    dv/dt 

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STH60N10/FI STW60N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH60N10 STH60N10FI www.DataSheet4U.com STW60N10 s s s s s s s s V DSS 10

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TrenchTM Power MOSFET IXTA60N10T IXTP60N10T N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL

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G60N10T N-Channel Enhancement Mode Power MOSFET Description The G60N10T uses advanced trench technology to provide excellent RDS(ON) , low gate char

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Advance Technical Information TrenchTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTQ60N10T VDSS = 100V ID25 = 6

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() CRTD360N10L Trench N-MOSFET 100V, 30mΩ, 36A Features • Uses CRM(CQ) advanced Trench MOS technology • Extremely low on-resistance RDS(on) • Excell

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Single N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: Pin Description: BVDSS 100V RDSON (MAX.) 60mΩ ID 20A S

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Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA160N10T IXTP160N10T VDSS = ID25 = RDS(on)

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OptiMOSTM-T2 Power-Transistor Features • N-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating

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