65N06 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=63A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance :

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KIA SEMICONDUCTORS 60V N-CHANNEL MOSFET 65N06 1.Description These N-Channel enhancement mode power field effect transistors are produced using KIA’

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RSS065N06 Transistors 4V Drive Nch MOSFET RSS065N06 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) SOP8 zFeatures 1) Low on-resistance.

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www.DataSheet4U.com IPB065N06L G IPP065N06L G OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channe

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FQA65N06 May 2001 QFET FQA65N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produce

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FQP65N06 ® FQP65N06 Pb Pb Free Plating Product 65A,60V Heatsink Planar N-Channel Power MOSFET Features • 65A, 60V, RDS(on) = 0.016Ω @VGS = 10 V

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KIA SEMICONDUCTORS 60V N-CHANNEL MOSFET 65N06 1.Description These N-Channel enhancement mode power field effect transistors are produced using KIA’

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BSZ065N06LS5 MOSFET OptiMOSTM Power-Transistor, 60 V Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superi

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www.DataSheet4U.com IPB065N06L G IPP065N06L G OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channe

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FQP65N06 May 2001 QFET FQP65N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produce

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FQPF65N06 — N-Channel QFET® MOSFET FQPF65N06 N-Channel QFET® MOSFET 60 V, 40 A, 16 mΩ Description This N-Channel enhancement mode power MOSFET is pro

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FDP65N06 — N-Channel UniFETTM MOSFET FDP65N06 N-Channel UniFETTM MOSFET 60 V, 65 A, 16 mΩ Features • RDS(on) = 13 mΩ (Typ.) @ VGS = 10 V, ID = 32.5 A

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Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • F

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FQB65N06 / FQI65N06 May 2001 QFET FQB65N06 / FQI65N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect t

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4V Drive Nch MOSFET RSH065N06 Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface M

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Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level

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FQB65N06 / FQI65N06 May 2001 QFET FQB65N06 / FQI65N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect t

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BSC065N06LS5 MOSFET OptiMOSTM Power-Transistor, 60 V Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superi

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Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-

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Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level

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