UNISONIC TECHNOLOGIES CO., LTD 6N10 6.5A, 100V N-C.
ON Semiconductor
NVMFS3D6N10MCL - N-Channel Power MOSFET
MOSFET - Power, Single N-Channel 100 V, 3.6 mW, 132 A NVMFS3D6N10MCL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize.
STANSON
ST36N10D - N-Channel Enhancement Mode MOSFET
ST36N10D N Channel Enhancement Mode MOSFET 36.0A DESCRIPTION STN36N10D is used trench technology to provide excellent RDS(on) and gate charge. Those d.
Matsuki
ME06N10 - N-Channel MOSFET
N-Channel 100-V (D-S) MOSFET ME06N10/ME06N10-G GENERAL DESCRIPTION The ME25N06 is the N-Channel logic enhancement mode power field effect transistor.
CET
CEB16N10L - N-Channel MOSFET
CEP16N10L/CEB16N10L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 15.2A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125m.
Unisonic Technologies
6N10 - N-Channel MOSFET
UNISONIC TECHNOLOGIES CO., LTD 6N10 6.5A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N10 is an N-Channel enhancement mode power FET providing .
INCHANGE
FDI036N10A - N-Channel MOSFET
isc N-Channel MOSFET Transistor FDI036N10A ·FEATURES ·With TO-262 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance:.
Vishay
T6N100CA - Transient Voltage Suppressors
www.vishay.com T6N12CA thru T6N100CA Vishay General Semiconductor Surface-Mount PAR® Transient Voltage Suppressors High Temperature Stability and Hi.
Infineon
BSZ096N10LS5 - MOSFET
BSZ096N10LS5 MOSFET OptiMOSTM5 Power-Transistor, 100 V Features • Ideal for high frequency switching • Optimized technology for DC/DC converters • Ex.
IXYS Corporation
IXFT6N100F - Power MOSFET
Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFH 6N100F VDSS .
IXYS Corporation
IXFT6N100F - Power MOSFETs
Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFH 6N100F VDSS .
ST Microelectronics
STP16N10L - N-CHANNEL Power MOSFET
® STP16N10L N - CHANNEL 100V - 0.14 Ω - 16A - TO-220 POWER MOS TRANSISTOR TYPE STP16N10L s s s s s s s s V DSS 100 V R DS(on) < 0.16 Ω ID 16 A T.
ST Microelectronics
STE16N100 - N-CHANNEL ENHANCEMENT MODE Power MOS Transistor
www.DataSheet4U.com www.DataSheet4U.com .
IXYS Corporation
IXFE36N100 - Power MOSFET
www.DataSheet4U.com HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS d.
Motorola
MTD6N10E - TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM
MOTOROLA SEMICONDUCTOR TECHNICAL DATA www.DataSheet4U.com Order this document by MTD6N10E/D Designer's TMOS E-FET .™ Power Field Effect Transisto.
ST Microelectronics
E16N100 - STE16N100
Edited by Foxit Reader Copyright(C) by Foxit Software Company,2005-2008 For Evaluation Only. www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.
IXYS Corporation
IXFN26N100P - Polar Power MOSFET HiPerFET
PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD T.
IXYS
IXTA6N100D2 - N-Channel MOSFET
Depletion Mode MOSFET N-Channel IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 D VDSX = ID(on) > RDS(on) 1000V 6A 2.2 TO-263 AA (IXTA) G S G S D (Tab) T.
IXYS
IXTH16N10D2 - Depletion Mode MOSFET
Advance Technical Information Depletion Mode MOSFET IXTH16N10D2 IXTT16N10D2 VDSX ID(on) RDS(on) = > ≤ 100V 16A 64mΩ N-Channel TO-247 (IXTH) Sym.
Laird
HI1206N101R-10 - Ferrite EMI Chip Beads
Ferrite EMI Chip Beads Features: • Up to 10 Amps (I MAX) continuous operating capability • Low DCR • Vibration Resistant • Rugged monolithic construct.
