6N10 Datasheet | Specifications & PDF Download

SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low

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BSC096N10LS5 MOSFET OptiMOSTM5 Power-Transistor, 100 V Features • Ideal for high-frequency switching • 100% avalanche tested • Superior thermal resis

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() CRSZ016N10N4Z SkyMOS4 N-MOSFET 100V, 1.26mΩ, 320A Features • Uses CRM(CQ) advanced SkyMOS4 technology • Extremely low on-resistance RDS(on) • Exc

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High Voltage Depletion Mode Power MOSFET IXTA1R6N100D2HV D VDSX = ID(on) >  RDS(on) 1000V 1.6A 10 N-Channel G S Symbol VDSX VGSX VGSM PD TJ TJ

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IPB026N10NF2S MOSFET StrongIRFETTM 2 Power-Transistor Features • Optimized for a wide range of applications • N-Channel, normal level • 100% avalanch

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IPP026N10NF2S MOSFET StrongIRFETTM 2 Power-Transistor Features • Optimized for a wide range of applications • N-Channel, normal level • 100% avalanch

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IPT026N10N5 MOSFET OptiMOSTM 5 Power-Transistor, 100 V Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on)

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UNISONIC TECHNOLOGIES CO., LTD 6N10 6.5A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N10 is an N-Channel enhancement mode power FET providing

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 36mΩ ID 30A N Channel MOSFET UIS, Rg

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SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low

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NCEP026N10M, NCEP026N10MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniqu

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NCEP026N10M, NCEP026N10MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniqu

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 6.5mΩ ID 135A G UIS, Rg 100% Teste

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X-Class HiPerFETTM Power MOSFET Advance Technical Information IXFT26N100XHV IXFH26N100X VDSS = ID25 = RDS(on) 1000V 26A 320m N-Channel Enhancem

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 13.3A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. Super high dense cell

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www.vishay.com T6N12CA thru T6N100CA Vishay General Semiconductor Surface-Mount PAR® Transient Voltage Suppressors High Temperature Stability and Hi

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UNISONIC TECHNOLOGIES CO., LTD 6N100-FC Power MOSFET 6A, 1000V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N100-FC provide excellent RDS(ON), low

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