UNISONIC TECHNOLOGIES CO., LTD 6N10 6.5 Amps, 100 .
CR Micro
18
CRSG026N10NZ - SkyMOS1 N-MOSFET
() CRSG026N10NZ SkyMOS1 N-MOSFET 100V, 2.2mΩ, 230A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on) • Excel.
GOFORD
17
GT016N10 - N-Channel Enhancement Mode Power MOSFET
GT016N10Q N-Channel Enhancement Mode Power MOSFET Description The GT016N10Q uses advanced trench technology to provide excellent RDS(ON) , low gate .
GOFORD
17
GT016N10TL - N-Channel Enhancement Mode Power MOSFET
GT016N10TL N-Channel Enhancement Mode Power MOSFET Description The GT016N10TL uses advanced trench technology to provide excellent RDS(ON) , low gat.
CR Micro
17
CRSG026N10N - SkyMOS1 N-MOSFET
() CRSG026N10N SkyMOS1 N-MOSFET 100V, 2.3mΩ, 212A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on) • Excell.
GOFORD
16
GT016N10 - N-Channel Enhancement Mode Power MOSFET
GT016N10TL N-Channel Enhancement Mode Power MOSFET Description The GT016N10TL uses advanced trench technology to provide excellent RDS(ON) , low gat.
GOFORD
15
GT016N10Q - N-Channel Enhancement Mode Power MOSFET
GT016N10Q N-Channel Enhancement Mode Power MOSFET Description The GT016N10Q uses advanced trench technology to provide excellent RDS(ON) , low gate .
KEC
13
KU086N10P - N-Channel MOSFET
SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low .
Infineon
6
IPP086N10N3G - Power-Transistor
IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(.
Unisonic Technologies
6
6N10 - N-Channel MOSFET
UNISONIC TECHNOLOGIES CO., LTD 6N10 6.5 Amps, 100 Volts N-CHANNEL POWER MOSFET Power MOSFET DESCRIPTION The UTC 6N10 is an N-Channel enhancement m.
MagnaChip
5
MDD06N100 - N-Channel MOSFET
MDD06N100 – Single N-Channel Trench MOSFET 60V MDD06N100 Single N-channel Trench MOSFET 60V, 50A, 10mΩ ㄹ General Description The MDD06N100 uses adva.
H&M Semiconductor
5
HM6N10 - N-Channel Enhancement Mode Power MOSFET
N-Channel Enhancement Mode Power MOSFET Description The +01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate c.
Infineon
5
BSC046N10NS3G - Power-Transistor
OptiMOSTM3 Power-Transistor Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level.
IXYS
5
IXTT16N10D2 - Depletion Mode MOSFET
Advance Technical Information Depletion Mode MOSFET IXTH16N10D2 IXTT16N10D2 VDSX ID(on) RDS(on) = > ≤ 100V 16A 64mΩ N-Channel TO-247 (IXTH) Sym.
NCE Power Semiconductor
5
NCEP026N10M - N-Channel Super Trench II Power MOSFET
NCEP026N10M, NCEP026N10MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniqu.
NXP
4
PHD6N10E - PowerMOS transistor
Philips Semiconductors Product specification PowerMOS transistor PHD6N10E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transi.
ETC
4
IXFN36N100 - HiPerFET Power MOSFETs Single Die MOSFET
HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR .
Matsuki
4
ME06N10-G - N-Channel MOSFET
N-Channel 100-V (D-S) MOSFET ME06N10/ME06N10-G GENERAL DESCRIPTION The ME25N06 is the N-Channel logic enhancement mode power field effect transistor.
CET
4
CEP16N10 - N-Channel MOSFET
CEP16N10/CEB16N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design f.
ON Semiconductor
4
MTW6N100E - Power MOSFET
MTW6N100E Preferred Device Power MOSFET 6 Amps, 1000 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide en.
