6N10 Datasheet | Specifications & PDF Download

() CRSZ016N10N4Z SkyMOS4 N-MOSFET 100V, 1.26mΩ, 320A Features • Uses CRM(CQ) advanced SkyMOS4 technology • Extremely low on-resistance RDS(on) • Exc

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CEP16N10/CEB16N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design f

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Philips Semiconductors Product specification PowerMOS transistor PHP6N10E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transi

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MOSFET - Power, Single N-Channel 100 V, 1.7 mW, 273 A NVMTS1D6N10MC Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize

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NCEP026N10M, NCEP026N10MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniqu

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Depletion Mode MOSFET N-Channel IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 D VDSX = ID(on) >  RDS(on) 1000V 6A 2.2 TO-263 AA (IXTA) G S G S D (Tab) T

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA www.DataSheet4U.com Order this document by MTD6N10E/D Designer's TMOS E-FET .™ Power Field Effect Transisto

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP086N10N3， IIPP086N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.2mΩ ·Enhanc

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SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low

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NCEP026N10M, NCEP026N10MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniqu

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Philips Semiconductors Product specification PowerMOS transistor PHP26N10E GENERAL DESCRIPTION N-channel enhancement mode field-effect power trans

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X-Class HiPerFETTM Power MOSFET Advance Technical Information IXFT26N100XHV IXFH26N100X VDSS = ID25 = RDS(on) 1000V 26A 320m N-Channel Enhancem

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MOSFET - Power, Single N-Channel 100 V, 3.6 mW, 132 A NVMFS3D6N10MCL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize

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High Voltage Depletion Mode Power MOSFET IXTA6N100D2HV D VDSX = ID(on) >  RDS(on) 1000V 6A 2.2 N-Channel G S Symbol VDSX VGSX VGSM PD TJ TJM T

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Philips Semiconductors Product specification PowerMOS transistor PHD6N10E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transi

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Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFH 6N100F VDSS

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PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD T

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NCEP026N10T NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM6N90 IXFH/IXFM6N100 V DSS 900 V 1000 V I D25 6A 6A

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CEB16N10L-VB CEB16N10L-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) 100 0.100 at VGS = 10 V

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