6N25 Datasheet | Specifications & PDF Download

FQP16N25 — N-Channel QFET® MOSFET FQP16N25 N-Channel QFET® MOSFET 250 V, 16 A, 230 mΩ Description This N-Channel enhancement mode power MOSFET is pro

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N R N-CHANNEL MOSFET JCS86N25T MAIN CHARACTERISTICS ID 86 A VDSS 250 V Rdson（Vgs=10V） -MAX 50mΩ Qg-Typ 123 nC Package  .  UPS

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CYStech Electronics Corp. Spec. No. : C894J3 Issued Date : 2013.03.11 Revised Date : 2013.12.30 Page No. : 1/9 N-Channel Enhancement Mode Power MOSF

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www.DataSheet.co.kr STP6N25 STP6N25FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE STP6N25 STP6N25FI s s s s s V DSS 250

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TrenchTM Power MOSFET N-Channel Enhancement Mode IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T VDSS = ID25 = RDS(on)  250V 76A 44m Typical Avalanc

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 39mΩ(Max) ·Fast Swi

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FDD6N25 — N-Channel UniFETTM MOSFET FDD6N25 N-Channel UniFETTM MOSFET 250 V, 4.4 A, 1.1 Ω Features • RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 2.2 A

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FQP16N25 — N-Channel QFET® MOSFET FQP16N25 N-Channel QFET® MOSFET 250 V, 16 A, 230 mΩ Description This N-Channel enhancement mode power MOSFET is pro

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Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH86N25T IXTQ86N25T IXTV86N25T VDSS = ID25

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 6N25 ·DESCRIPTION ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Volta

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 39mΩ@VGS=10V ·Fully characterized avalanche voltage and curre

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250V N-Channel MOSFETs PDD16N25 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technolo

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB16N25E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount De

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MTB16N25E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET D2PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate The D2PAK package

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 37mΩ(Max) ·Fast Swi

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250V N-Channel MOSFETs PDF16N25 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technolo

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SHENZHEN ICHON TECH. CO., LTD P16N25 TO-220

  

    
 
   
      

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Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH86N25T IXTQ86N25T IXTV86N25T VDSS = ID25

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 44mΩ(Max) ·Fast Swi

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TM

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