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IXTH76N25T N-Channel MOSFET

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Description

isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number
IXTH76N25T
Manufacturer
INCHANGE
File Size
334.93 KB
Datasheet
IXTH76N25T-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤ 39mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous IDM Drain Current-Single Pulsed PD Total Dissipation @TC=25℃ Tj Operating Junction Temperature 250 V ±30 V 76 A 170 A 300 W -55~

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