INCHANGE manufacturer logo Part number: IXTH76N25T Manufacturer: INCHANGE File Size: 334.93kb Download: 📄 Datasheet Description: N-channel mosfet.
IXTH76N25T - Power MOSFET (IXYS) TrenchTM Power MOSFET N-Channel Enhancement Mode IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T VDSS = ID25 = RDS(on) 250V 76A 44m Typical Avalanc.
IXTH76P10T - Power MOSFET (IXYS) TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T D G S Symbol VDSS VDGR VGSS VGSM ID2.
IXTH72N20 - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 33mΩ(Max) ·Fast Swi.
IXTH75N10 - N-Channel MOSFET (IXYS Corporation) MegaMOSTMFET N-Channel Enhancement Mode IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 VDSS 100 V 100 V ID25 67 A 75 A RDS(on) 25 mΩ 20 mΩ TO-247.
IXTH75N10 - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 25mΩ(Max) ·Fast Swi.
IXTH75N10L2 - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 11mΩ@VGS=10V ·Fully characterized avalanche voltage and curre.
IXTH75N10L2 - Power MOSFET (IXYS) Advance Technical Information LinearL2TM Power MOSFET w/extended FBSOA N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated IXTH75N10L2 IXTT7.
IXTH75N15 - High Current Power MOSFET (IXYS) High Current Power MOSFET N-Channel Enhancement Mode IXTH 75N15 IXTT 75N15 VDSS ID25 RDS(on) = 150 V = 75 A = 23 mΩ Symbol VDSS VDGR VGS VGSM ID25.
IXTH75N15 - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 23mΩ(Max) ·Fast Swi.
IXTH7P50 - P-Channel MOSFET (IXYS Corporation) VDSS ID25 RDS(on) Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 7P50 IXTH 8P50 -500V -7 A 1.5 Ω -500V -8 A 1.2 Ω Symbol V.
