IXTQ76N25T Datasheet, MOSFET, IXYS

IXTQ76N25T Features

• Mosfet
• Avalanche Rated
• High Current Handling Capability
• Fast Intrinsic Rectifier
• Low RDS(on) Advantages
• Easy to Mount
• Space Savings

PDF File Details

Part number:

IXTQ76N25T

Manufacturer:

IXYS

File Size:

286.18kb

Download:

📄 Datasheet

Description:

Power mosfet.

IXTQ76N25T Application

• Applications
• DC-DC Converters
• Battery Chargers
• Switch-Mode and Resonant-Mode Power Supplies
• DC Choppers

TAGS

IXTQ76N25T

IXYS

📁 Related Datasheet

IXTQ76N25T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 39mΩ(Max) ·Fast Swi.

IXTQ74N20P - Power MOSFET (IXYS)
PolarHT Power MOSFET TM IXTQ 74N20P IXTT 74N20P VDSS ID25 .. RDS(on) = 200 V = 74 A = 34 mΩ N-Channel Enhancement Mode Avalanch.

IXTQ74N20P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 60mΩ(Max) ·Fast Swi.

IXTQ75N10P - N-Channel MOSFET (IXYS)
PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 75N10P IXTP 75N10P IXTQ 75N10P V = 100 V DSS ID25 = 75 A ≤ RDS(on) 25 m.

IXTQ75N10P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 25mΩ(Max) ·Fast Swi.

IXTQ75N15 - High Current Power MOSFET (IXYS)
High Current Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet IXTH 75N15 IXTQ 75N15 IXTT 75N15 VDSS ID25 RDS(on) = 150 V = 75 A = 23 .

IXTQ100N25P - N-Channel MOSFET (IXYS Corporation)
PolarHTTM Power MOSFET IXTK 100N25P IXTQ 100N25P IXTT 100N25P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) 250 V 100 A 27 mΩ.

IXTQ102N15T - Power MOSFET (IXYS)
Trench Gate Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T TO-263 (IXTA) TO-247 (IXTH) T.

IXTQ102N15T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max) ·Fast Swi.

IXTQ102N20T - Power MOSFET (IXYS)
Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH102N20T IXTQ102N20T IXTV102N20T VDSS = ID2.