IXTQ75N10P Datasheet - IXYS

IXTQ75N10P N-Channel MOSFET

PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 75N10P IXTP 75N10P IXTQ 75N10P V = 100 V DSS ID25 = 75 A ≤ RDS(on) 25 mΩ TO-263 (IXTA) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR E AR EAS dv/dt PD TJ T JM Tstg TL TSOLD M d Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C T C = 25° C TC = 25° C I S ≤ I, DM di/dt ≤ 100 A/µs, V DD ≤ V, DSS T J ≤1.

IXTQ75N10P Features

* l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99158E(12/05) Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Qg(

IXTQ75N10P Datasheet (294.27 KB)