IXTQ75N15 Datasheet - IXYS

IXTQ75N15 High Current Power MOSFET

High Current Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet IXTH 75N15 IXTQ 75N15 IXTT 75N15 VDSS ID25 RDS(on) = 150 V = 75 A = 23 mΩ TO-247 AD (IXTH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0..

IXTQ75N15 Features

* D = Drain TAB = Drain z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density DS989

IXTQ75N15-IXYS.pdf