6N40 Datasheet | Specifications & PDF Download

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MTW16N40E 4 Power MOSFET t 16 Amps, 400 Volts ee N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced vo

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NTD6N40 Preferred Device Power MOSFET 6 Amps, 400 Volts N−Channel DPAK Designed for high voltage, high speed switching applications in power supplies,

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HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S March 1997 6A, 400V and 500V N-Channel IGBTs Packages HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA EMITTER

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AM6N40R 400V 6A Low Qg N-Ch Power MOSFET FEATURES ■ Low drain-source On resistance : RDS(on) = 0.9Ω (Typ.) ■ Low gate charge : Qg = 14nC (Typ.) ■ Lo

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FTP06N40/FTA06N40 400V N MOS ¾ ¾ ¾ ¾ ¾ (18.6nC) 100% RoHS/ BVDSS 400V RDS(ON) (Max.) 1.0Ω ID 5.5A ¾ ¾ ¾ ¾ / FTP06N40 FTA06N40 TO-220

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MS6N40 N-Channel Enhancement Mode Power MOSFET Description The MS6N40 is a N-channel enhancement-mode MOSFET, providing the designer with the best com

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FQB6N40C — N-Channel QFET® MOSFET FQB6N40C N-Channel QFET® MOSFET 400 V, 6 A, 1.0 Ω November 2013 Description These N-Channel enhancement mode powe

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FQD6N40C / FQU6N40C QFET FQD6N40C / FQU6N40C 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistor

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HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S March 1997 6A, 400V and 500V N-Channel IGBTs Packages HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA EMITTER

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FQD6N40C / FQU6N40C QFET FQD6N40C / FQU6N40C 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistor

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FTP06N40/FTA06N40 400V N MOS ¾ ¾ ¾ ¾ ¾ (18.6nC) 100% RoHS/ BVDSS 400V RDS(ON) (Max.) 1.0Ω ID 5.5A ¾ ¾ ¾ ¾ / FTP06N40 FTA06N40 TO-220

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 6N40 ·DESCRIPTION ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Volta

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GENERAL DESCRIPTION This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, conveters,

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HFD6N40S / HFU6N40S July 2009 HFD6N40S / HFU6N40S 400V N-Channel MOSFET BVDSS = 400 V RDS(on) typ = 0.83 Ω ID = 4.5 A FEATURES  Originative New D

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Silicon N-Channel Power MOSFET ○R CS6N40 A3R General Description： CS6N40 A3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a

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FQB6N40C/FQI6N40C QFET FQB6N40C/FQI6N40C 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors ar

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