6N60A Datasheet | Specifications & PDF Download

Advance Technical Information GenX3TM 600V IGBT IXGH56N60A3 VCES = IC110 = VCE(sat) ≤ 600V 56A 1.35V Ultra-Low Vsat PT IGBT for up to 5 kHz Switc

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SEMICONDUCTOR 6N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (6A, 600Volts) DESCRIPTION The Nell 6N60 is a three-terminal sili

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SEMICONDUCTOR 6N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (6A, 600Volts) DESCRIPTION The Nell 6N60 is a three-terminal sili

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Silicon N-Channel Power MOSFET CS6N60 A3TY ○R General Description： CS6N60 A3TY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

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www.vishay.com IRFIB6N60A Vishay Siliconix Power MOSFET D TO-220 FULLPAK G S GD S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max.

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IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET N-ChaNnCnehlaEnnheal EncnehmanecnetmMeondteMSowdietch Mode RF MOSFET Low CLaopwacQitgaanncde RZg-MOSTM

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www.DataSheet4U.com PD - 91813 SMPS MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switch

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V D RDSON (MAX.) 1.55Ω ID 6A G UIS, 100% Tested S

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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi

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Silicon N-Channel Power MOSFET CS6N60 A3D ○R General Description： CS6N60 A3D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP16N60

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ITU06N60A ITD06N60A N-Channel MOSFET Pb Lead Free Package and Finish Applications: • Adaptor • Charger • SMPS Power Supply • LCD Panel Power Featur

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Silicon N-Channel Power MOSFET CS6N60 A3HDY ○R General Description： CS6N60 A3HDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the sel

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Silicon N-Channel Power MOSFET CS6N60 A8H ○R General Description： CS6N60 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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GenX3TM 600V IGBT Ultra Low Vsat PT IGBT for up to 5kHz Switching IXGA36N60A3 IXGP36N60A3 IXGH36N60A3 Symbol VCES VCGR VGES VGEM IICC21510 ICM SSOA

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GenX3TM 600V IGBT Ultra Low Vsat PT IGBT for up to 5kHz Switching IXGA36N60A3 IXGP36N60A3 IXGH36N60A3 Symbol VCES VCGR VGES VGEM IICC21510 ICM SSOA

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www.vishay.com IRFIB6N60A, SiHFIB6N60A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configurat

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Silicon N-Channel Power MOSFET CS6N60 A7H ○R General Description： CS6N60 A7H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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Silicon N-Channel Power MOSFET CS6N60 A4H ○R General Description： CS6N60 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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GenX3TM 600V IGBT Ultra Low Vsat PT IGBT for up to 5kHz Switching IXGA36N60A3 IXGP36N60A3 IXGH36N60A3 Symbol VCES VCGR VGES VGEM IICC21510 ICM SSOA

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