6N80 Datasheet | Specifications & PDF Download

FQPF6N80T — N-Channel QFET® MOSFET FQPF6N80T N-Channel QFET® MOSFET 800 V, 3.3 A, 1.95 Ω Description This N-Channel enhancement mode power MOSFET is

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PFI6N80G / PFB6N80G FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka

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FQP6N80 September 2000 QFET FQP6N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr

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FQP6N80C / FQPF6N80C — N-Channel QFET® MOSFET FQP6N80C / FQPF6N80C N-Channel QFET® MOSFET 800 V, 5.5 A, 2.5 Ω December 2013 Description This N-Chan

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max) ·Fast Swi

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Advance Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM (Electrically Isolated Back Surface) IXFC 16N80P VDSS ID25 RDS(on) trr

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PFI6N80G / PFB6N80G FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka

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PFP6N80 / PFF6N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkabl

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PolarHVTM Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS VDSS = 800 V

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Ferrite EMI Chip Beads Features: • Up to 10 Amps (I MAX) continuous operating capability • Low DCR • Vibration Resistant • Rugged monolithic construct

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PFU6N80G FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switchi

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Standard Power MOSFET IXTH / IXTM 6N80 IXTH / IXTM 6N80A N-Channel Enhancement Mode V DSS I D25 R DS(on) 800 V 6 A 1.8 Ω 800 V 6 A 1.4 Ω Symbo

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY16N80E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY16N

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.8Ω(Max) ·Fast Swi

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MTY16N80E Designer’s™ Data Sheet TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an a

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FQA6N80 September 2000 QFET FQA6N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr

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PFP6N80 / PFF6N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkabl

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FQAF6N80 September 2000 QFET FQAF6N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are

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SPP06N80C3 CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qua

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max) ·Fast Swi

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