6N90 Datasheet | Specifications & PDF Download

UNISONIC TECHNOLOGIES CO., LTD 6N90-C 6.0A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N90-C provide excellent RDS(ON), low gate charge and op

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SSS6N90C-VB www.VBsemi.com SSS6N90C-VB Datasheet N-Channel 900 V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (

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UNISONIC TECHNOLOGIES CO., LTD 6N90 6.2A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N90 is a N-channel enhancement mode power MOSFET using U

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isc N-Channel MOSFET Transistor STF6N90K5 FEATURES ·Drain Current : ID= 6.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On

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Silicon N-Channel Power MOSFET CS6N90 A8H ○R General Description： CS6N90 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data Symbol VDSS VDGR VGS VGS

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM6N90 IXFH/IXFM6N100 V DSS 900 V 1000 V I D25 6A 6A

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PFI6N90EG FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switch

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www.DataSheet4U.com HiPerFETTM Power MOSFETs IXFN 26N90 Single Die MOSFET IXFN 25N90 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr

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PFP6N90E / PFF6N90E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka

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PFI6N90GN FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switch

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Standard Power MOSFET VDSS IXTH / IXTM 6N90 IXTH / IXTM 6N90A 900 V 900 V ID25 6A 6A RDS(on) 1.8 Ω 1.4 Ω N-Channel Enhancement Mode Symbol VDSS V

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance :

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N R N-CHANNEL MOSFET JCS6N90A MAIN CHARACTERISTICS ID 6.0 A VDSS 900 V Rdson（Vgs=10V） -MAX 3.0Ω Qg-Typ 24.0nC Package  .  LED

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PFP6N90E / PFF6N90E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka

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www.DataSheet4U.com FQA6N90C 900V N-Channel MOSFET QFET FQA6N90C 900V N-Channel MOSFET Features • • • • • • 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V Low

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MS6N90 900V N-Channel MOSFET Description The MS6N90 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast s

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK25N90 IXFX25N90 IXFK26N90 IXFX26N90 Symbol VDSS VDGR VG

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www.DataSheet.co.kr http://www.fujisemi.com FMH06N90E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS(on) charact

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Standard Power MOSFET VDSS IXTH / IXTM 6N90 IXTH / IXTM 6N90A 900 V 900 V ID25 6A 6A RDS(on) 1.8 Ω 1.4 Ω N-Channel Enhancement Mode Symbol VDSS V

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