6N90 Datasheet | Specifications & PDF Download

www.DataSheet4U.com FQA6N90C 900V N-Channel MOSFET QFET FQA6N90C 900V N-Channel MOSFET Features • • • • • • 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V Low

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www.DataSheet.co.kr http://www.fujisemi.com FMH06N90E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS(on) charact

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UNISONIC TECHNOLOGIES CO., LTD 6N90 6.2A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N90 is a N-channel enhancement mode power MOSFET using U

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isc N-Channel MOSFET Transistor STF6N90K5 FEATURES ·Drain Current : ID= 6.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On

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UNISONIC TECHNOLOGIES CO., LTD 6N90Z Preliminary 6.2A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N90Z is an N-channel enhancement mode po

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N R N-CHANNEL MOSFET JCS6N90H MAIN ID VDSS Rdson-max （@Vgs=10V） Qg-typ CHARACTERISTICS 6A 900 V 3.0 Ω 14 nC Package    UPS APPLICATI

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N R N-CHANNEL MOSFET JCS6N90A MAIN CHARACTERISTICS ID 6.0 A VDSS 900 V Rdson（Vgs=10V） -MAX 3.0Ω Qg-Typ 24.0nC Package  .  LED

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FQA6N90C_F109 900V N-Channel MOSFET FQA6N90C_F109 900V N-Channel MOSFET Features • 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V • Low gate charge ( typical 3

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N R N-CHANNEL MOSFET JCS6N90H MAIN ID VDSS Rdson-max （@Vgs=10V） Qg-typ CHARACTERISTICS 6A 900 V 3.0 Ω 14 nC Package    UPS APPLICATI

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STP6N90K5 N-channel 900 V, 0.91 Ω typ., 6 A MDmesh™ K5 Power MOSFET in a TO-220 package Datasheet - production data TAB TO-220 1 23 Figure 1: Int

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UNISONIC TECHNOLOGIES CO., LTD 6N90-FC Preliminary 6A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N90-FC provide excellent RDS(ON), low ga

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FQA6N90C-F109 — N-Channel QFET® MOSFET FQA6N90C-F109 N-Channel QFET® MOSFET 900 V, 6 A, 2.3 Ω Features • 6 A, 900 V, RDS(on) = 2.3 Ω (Max.) @ VGS = 1

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Silicon N-Channel Power MOSFET ○R CS6N90F A9R General Description： CS6N90F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self

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June 2007 PFP6N90 / PFF6N90 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances

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STI6N90K5 N-channel 900 V, 0.91 Ω typ., 6 A MDmesh™ K5 Power MOSFET in an I²PAK package Datasheet - production data TAB 123 I²PAK Figure 1: Internal

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AOTF6N90 900V,6A N-Channel MOSFET General Description Product Summary The AOTF6N90 is fabricated using an advanced high voltage MOSFET process that

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance :

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N R N-CHANNEL MOSFET JCS6N90A MAIN CHARACTERISTICS ID 6.0 A VDSS 900 V Rdson（Vgs=10V） -MAX 3.0Ω Qg-Typ 24.0nC Package  .  LED

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PFP6N90E / PFF6N90E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka

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FQB6N90 / FQI6N90 December 2000 QFET FQB6N90 / FQI6N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect

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