6NM60-Q Datasheet | Specifications & PDF Download

STL26NM60N N-channel 600 V, 0.160 Ω , 19 A PowerFLAT™ 8x8 HV ultra low gate charge MDmesh™ II Power MOSFET Features Order code STL26NM60N VDSS @ TJmax

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=21A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance :

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STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N N-channel 600 V, 0.135 Ω , 20 A MDmesh™ II Power MOSFET 2 2 in D PAK, I PAK, TO-220, TO-220F

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Isc N-Channel MOSFET Transistor ·FEATURES ·Low input capacitance and gate charge ·Low gate input resistances ·100% avalanche tested ·Minimum Lot-to-Lo

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STF26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFET in a TO-220FP package Datasheet - production data TO-220FP Figure 1: Internal

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STFI26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFET in an I²PAKFP package Datasheet - production data 1 23 I 2 PAKFP (TO-281) Fi

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STW26NM60 STU26NM60, STU26NM60I N-CHANNEL 600V - 0.125Ω - 26A TO-247,Max220,Max220I Zener-Protected MDmesh™ Power MOSFET TYPE VDSS RDS(on) ID STW

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STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND N-channel 600 V, 0.145 Ω typ., 21 A, FDmesh™ II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247

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www.DataSheet.co.kr STL26NM60N N-channel 600 V, 0.160 Ω , 19 A PowerFLAT™ 8x8 HV ultra low gate charge MDmesh™ II Power MOSFET Features Order code ST

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STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND N-channel 600 V, 0.145 Ω typ., 21 A, FDmesh™ II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247

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STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND N-channel 600 V, 0.145 Ω typ., 21 A, FDmesh™ II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247

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N-CHANNEL 600V - 0.125Ω - 26A TO-247 Zener-Protected MDmesh™Power MOSFET TYPE STW26NM60 n n n n n STW26NM60 VDSS 600 V RDS(on) < 0.135 Ω ID 30 A

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=21A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance :

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance :

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UNISONIC TECHNOLOGIES CO., LTD 6NM60-S Preliminary 6.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 6NM60-S is a Super Junction MO

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STB36NM60ND, STW36NM60ND Automotive-grade N-channel 600 V, 0.097 Ω typ., 29 A FDmesh™ II Power MOSFETs (with fast diode) in D2PAK and TO-247 packages

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STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND N-channel 600 V, 0.145 Ω typ., 21 A, FDmesh™ II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247

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STD6NM60N - STD6NM60N-1 STF6NM60N - STP6NM60N N-channel 600V - 0.85Ω - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET F

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STW26NM60N-H N-channel 600 V, 0.135 Ω , 20 A TO-247 MDmesh™ II Power MOSFET Features Type STW26NM60N-H ■ ■ ■ VDSS 600 V RDS(on) max < 0.165 Ω ID 20

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STF26NM60N-H N-channel 600 V, 0.135 Ω , 20 A MDmesh™ II Power MOSFET in TO-220FP Features Type STF26NM60N-H ■ ■ ■ VDSS 600 V RDS(on) max < 0.165 Ω

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