75N06 Datasheet | Specifications & PDF Download

N N-CHANNEL IGBT R JT075N065WED MAIN CHARACTERISTICS IC VCES Vcesat-typ 75A 650V 1.7V Package  UPS APPLICATIONS  General purpose inverte

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N N-CHANNEL IGBT R TT075N065EQ MAIN CHARACTERISTICS IC VCES Vcesat-typ 75A 650V 1.6V Package TO-247   UPS DC-DC     Trench FS

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 75N06 ·DESCRIPTION ·High current capability ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Swi

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NTP75N06, NTB75N06, NTBV75N06 Power MOSFET 75 Amps, 60 Volts, N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications

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N N-CHANNEL IGBT R ATT075N065EQ MAIN CHARACTERISTICS Package IC VCE Vcesat-typ 75A 650V 1.7V   DC-DC   Trench FS RoHS AEC-Q10

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SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 0.0085 @ VGS = 4.5 V rDS(on) (W) 0.0075 @ VGS =

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON

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N N-CHANNEL IGBT R JT075N065GHED MAIN CHARACTERISTICS IC VCE Vcesat-typ 75A 650V 1.7V Package  UPS APPLICATIONS General purpose inverte

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SUP/SUB75N06-08 N-Channel Enhancement-Mode Transistors Product Summary V(BR)DSS (V) 60 TO-220AB TO-263 G DRAIN connected to TAB G D S Top View SUB75N0

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SUP/SUB75N06-08 Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.008 ID (A) 75a TO-220AB D TO-2

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP75N06HD/D Designer's HDTMOS E-FET ™ High Density Power FET N–Channel Enhancement–M

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PJP75N06 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=13mΩ • RDS(ON), VGS@4.5V,IDS@30A=18mΩ • Advanced Trench Process Tec

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MTP75N06HD Preferred Device Power MOSFET 75 A, 60 V, N−Channel, TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and com

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www.DataSheet4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com DataShee DataShe

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Elektronische Bauelemente SSD75N06J 75A, 60V, RDS(ON) 11.5mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies ha

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                        ADV     ADM75N06  N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 75A RDS(ON) (mΩ) 11.5mΩ

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CEP75N06/CEB75N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. Super high dense cell design for e

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www.DataSheet4U.com SUP/SUB75N06-08 N-Channel Enhancement-Mode Transistors Product Summary V(BR)DSS (V) 60 TO-220AB TO-263 G DRAIN connected to TAB G

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www.DataSheet4U.com PRELIMINARY SFF75N06-28 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (56

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MTB75N06HD Preferred Device Power MOSFET 75 Amps, 60 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and

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