75N06 Datasheet | Specifications & PDF Download

HM 1 .$ N-Channel Enhancement Mode Power MOSFET Description The HM 1 .$ uses advanced trench technology and design to provide excellent RDS(ON) w

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CEP75N06G/CEB75N06G N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 75A, RDS(ON) = 13mΩ @VGS = 10V. Super high dense cell design for

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N N-CHANNEL IGBT R JT075N065WED MAIN CHARACTERISTICS IC VCES Vcesat-typ 75A 650V 1.7V Package  UPS APPLICATIONS  General purpose inverte

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON

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N N-CHANNEL IGBT R JT075N065GHED MAIN CHARACTERISTICS IC VCE Vcesat-typ 75A 650V 1.7V Package  UPS APPLICATIONS General purpose inverte

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                        ADV     ADM75N06  N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 75A RDS(ON) (mΩ) 11.5mΩ

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 75N06 ·DESCRIPTION ·High current capability ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Swi

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CEP75N06G/CEB75N06G N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 75A, RDS(ON) = 13mΩ @VGS = 10V. Super high dense cell design for

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N N-CHANNEL IGBT R TT075N065EQ MAIN CHARACTERISTICS IC VCES Vcesat-typ 75A 650V 1.6V Package TO-247   UPS DC-DC     Trench FS

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N N-CHANNEL IGBT R ATT075N065EQ MAIN CHARACTERISTICS Package IC VCE Vcesat-typ 75A 650V 1.7V   DC-DC   Trench FS RoHS AEC-Q10

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NTP75N06, NTB75N06, NTBV75N06 Power MOSFET 75 Amps, 60 Volts, N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON

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www.DataSheet4U.com SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 SFF75N06M SFF

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NTP75N06, NTB75N06, NTBV75N06 Power MOSFET 75 Amps, 60 Volts, N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU75N06 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID 6

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UNISONIC TECHNOLOGIES CO., LTD UTT75N06 Power MOSFET 75A, 60V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT75N06 is n-channel enhancement mode po

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Silicon Carbide (SiC) MOSFET - EliteSiC, 56 mohm, 650 V, M2, TOLL NTBL075N065SC1 Features • Typ. RDS(on) = 56 mW @ VGS = 18 V Typ. RDS(on) = 75 mW @

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OM55N10SC OM60N10SC OM75N05SC OM75N06SC OM55N10SA OM75N05SA OM75N06SA LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V, 60V, An

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 57 mohm, 650 V, M2, TO-247-4L NTH4L075N065SC1 Features • Typ. RDS(on) = 57 mW @

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PJP75N06 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=13mΩ • RDS(ON), VGS@4.5V,IDS@30A=18mΩ • Advanced Trench Process Tec

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