75N06 Datasheet | Specifications & PDF Download

NTP75N06, NTB75N06, NTBV75N06 Power MOSFET 75 Amps, 60 Volts, N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications

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N N-CHANNEL IGBT R JT075N065WED MAIN CHARACTERISTICS IC VCES Vcesat-typ 75A 650V 1.7V Package  UPS APPLICATIONS  General purpose inverte

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NTP75N06, NTB75N06, NTBV75N06 Power MOSFET 75 Amps, 60 Volts, N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications

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N N-CHANNEL IGBT R TT075N065EQ MAIN CHARACTERISTICS IC VCES Vcesat-typ 75A 650V 1.6V Package TO-247   UPS DC-DC     Trench FS

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 75N06 ·DESCRIPTION ·High current capability ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Swi

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PJP75N06 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=13mΩ • RDS(ON), VGS@4.5V,IDS@30A=18mΩ • Advanced Trench Process Tec

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OM55N10SC OM60N10SC OM75N05SC OM75N06SC OM55N10SA OM75N05SA OM75N06SA LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V, 60V, An

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB75N06HD/D ™ Data Sheet HDTMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount

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OM55N10SC OM60N10SC OM75N05SC OM75N06SC OM55N10SA OM75N05SA OM75N06SA LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V, 60V, An

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NTP75N06, NTB75N06, NTBV75N06 Power MOSFET 75 Amps, 60 Volts, N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications

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Silicon Carbide (SiC) MOSFET - EliteSiC, 56 mohm, 650 V, M2, TOLL NTBL075N065SC1 Features • Typ. RDS(on) = 56 mW @ VGS = 18 V Typ. RDS(on) = 75 mW @

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CEP75N06/CEB75N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. Super high dense cell design for e

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CEP75N06G/CEB75N06G N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 75A, RDS(ON) = 13mΩ @VGS = 10V. Super high dense cell design for

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HM 1 .$ N-Channel Enhancement Mode Power MOSFET Description The HM 1 .$ uses advanced trench technology and design to provide excellent RDS(ON) w

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N N-CHANNEL IGBT R JT075N065GHED MAIN CHARACTERISTICS IC VCE Vcesat-typ 75A 650V 1.7V Package  UPS APPLICATIONS General purpose inverte

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON

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MTB75N06HD Preferred Device Power MOSFET 75 Amps, 60 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 57 mohm, 650 V, M2, TO-247-4L NTH4L075N065SC1 Features • Typ. RDS(on) = 57 mW @

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                        ADV     ADM75N06  N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 75A RDS(ON) (mΩ) 11.5mΩ

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP75N06HD/D Designer's HDTMOS E-FET ™ High Density Power FET N–Channel Enhancement–M

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