75N75 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor 75N75 FEATURES ·Drain Current –ID= 75A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resis

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UNISONIC TECHNOLOGIES CO., LTD 75N75 80A, 75V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 75N75 is n-channel enhancement mode power field effect tra

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ME75N75T / ME75N75T-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION The ME75N75T is the N-Channel logic enhancement mode power field effect transis

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PJP75N75 75V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=11mΩ • Advanced Trench Process Technology • High Density Cell Desig

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POWER MOSFET Features  75V,80A N-Channel MOSFET  RDS(on)(typ.)=6.5mΩ@VGS=10V,ID=40A  High ruggedness  Fast switching  100% avalanche tested  Exc

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Silicon N-Channel Power MOSFET CS75N75 B8H ○R General Description： CS75N75 B8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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N N-CHANNEL MOSFET R JCS75N75F MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ  DC/DC  D 75 A 75 V 9.8 mΩ 74 nC APPL

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N N-CHANNEL MOSFET R JCS75N75F MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ  DC/DC  D 75 A 75 V 9.8 mΩ 74 nC APPL

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ST75N75 N Channel Enhancement Mode MOSFET 75.0A DESCRIPTION ST75N75 is used trench technology to provide excellent RDS(on) and gate charge. Those devi

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N N-CHANNEL MOSFET R JCS75N75F MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ  DC/DC  D 75 A 75 V 9.8 mΩ 74 nC APPL

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N-CHANNEL POWER MOSFET DESCRIPTION This MOSFET is produced with advanced VDMOS technology of SEMIWILL. This technology enable power MOSFET to have bet

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www.DataSheet4U.com DFP75N75 N-Channel MOSFET Features ■ ■ ■ ■ ■ ■ Low RDS(on) (0.012Ω )@VGS=10V Low Gate Charge (Typical 90nC) Low Crss (Typical 21

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N N-CHANNEL MOSFET R JCS75N75F MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ  DC/DC  D 75 A 75 V 9.8 mΩ 74 nC APPL

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd 75N75 Features • 70V/80A, RDS(ON)=5.6 mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged

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HFS75N75 Dec 2008 HFS75N75 75V N-Channel MOSFET BVDSS = 75 V RDS(on) typ=10.5 mΩ ID = 80 A FEATURES  Originative New Design  Superior Avalanche

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SW75N75 Features  High ruggedness  Low RDS(ON) (Typ 6mΩ)@VGS=10V  Low Gate Charge (Typ 126nC)  Improved dv/dt Capability  100% Avalanche Tested

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DG75N75 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG75N75N，， ，，，。 ，，。 DG75N75 is an N-channel enhancement mode MOSFET, which i

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BR75N75 Rev.D Nov.-2015 DATA SHEET / Descriptions TO-220 N MOS 。N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,。 Low gate charge,

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HFP75N75 Mar 2007 HFP75N75 75V N-Channel MOSFET BVDSS = 75 V RDS(on) typ Pȍ ID = 80 A FEATURES ‰ Originative New Design ‰ Superior Avalanche

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Wisdom Semiconductor WFP75N75 N-Channel MOSFET Features ■ RDS(on) (Max 0.017 Ω )@VGS=10V ■ Gate Charge (Typical 85nC) ■ Improved dv/dt Capability,

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