7N65-F Datasheet | Specifications & PDF Download

7N65(F,B,H) 7A mps,650 Volts N-CHANNEL MOSFET FEATURE  7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A  Low gate charge  Low Ciss  Fast switching  100% aval

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7N65(F,B,H) 7A mps,650 Volts N-CHANNEL MOSFET FEATURE  7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A  Low gate charge  Low Ciss  Fast switching  100% avala

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7N65/F7N65/I7N65/E7N65/B7N65/D7N65 7A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by t

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www.DataSheet.co.kr FQP7N65C/FQPF7N65C FQP7N65C/FQPF7N65C 650V N-Channel MOSFET QFET® General Description These N-Channel enhancement mode power f

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MDF7N65B N-channel MOSFET 650V MDF7N65B N-Channel MOSFET 650V, 7.0A, 1.35Ω General Description These N-channel MOSFET are produced using advanced Ma

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7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s propriet

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ITA07N65R N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 650V Lead Free Package and Finish RDS(ON)(Typ.) 1.2Ω ID 7A Features: ●

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SVF7N65T/F_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65T/F is an N-channel enhancement mode power MOS field effect transistor which

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7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s propriet

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7N65/F7N65/I7N65/E7N65/B7N65/D7N65 7A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by t

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DG7N65 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG7N65N，， ，，，。 ，，。 DG7N65 is an N-channel enhancement mode MOSFET, which is

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UNISONIC TECHNOLOGIES CO., LTD 7N65 7.4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to hav

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R SEMICONDUCTOR 7N65 7N65F 7N65D 7N65E 7N65M 7N65N 650V N-Channel Power MOSFET FEATURES ● RDS(ON)<1.5Ω @ VGS=10V ● Fast switching capability ● Low g

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AOT7N65/AOTF7N65 650V, 7A N-Channel MOSFET General Description Product Summary The AOT7N65 & AOTF7N65 have been fabricated using an advanced high v

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R N N-CHANNEL MOSFET JCS7N65B MAIN CHARACTERISTICS Package ID VDSS Rdson （@Vgs=10V） Qg z z z UPS 7.0 A 650 V 1.3 Ω 25 nC APPLICATIONS z Hi

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NTHL027N65S3HF Power MOSFET, N-Channel, SUPERFET) III, FRFET), 650 V, 75 A, 27.4 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new hi

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GPT07N65 / GPT07N65D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to pro

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FQP7N65/FQPF7N65 650V, 7A N-Channel MOSFET General Description Product Summary The FQP7N65 & FQPF7N65 have been fabricated using an advanced high v

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MOSFET – Single N-Channel, SUPERFET) III, FRFET) 650 V, 75 A, 27.4 mW NVH4L027N65S3F Features • Ultra Low Gate Charge & Low Effective Output Capacit

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