7N80-C Datasheet | Specifications & PDF Download

CoolMOS® Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accord

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HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg IXFH 17N80Q IXFT 17N80Q VDSS ID25 RDS(on) = 800 V =

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Silicon N-Channel Power MOSFET ○R CS7N80 A8R General Description： CS7N80 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a

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PolarTM HiPerFETTM Power MOSFET IXFA7N80P IXFP7N80P VDSS ID25 trr RDS(on) = 800V = 7A ≤ 1.44Ω ≤ 250ns N-Channel Enhancement Mode Avalanche Rated

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FQP7N80C/FQPF7N80C QFET FQP7N80C/FQPF7N80C 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors

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June 2007 PFI7N80G / PFB7N80G FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitance

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PFP7N80E / PFF7N80E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka

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June 2007 PFI7N80G / PFB7N80G FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitance

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June 2007 PFP7N80 / PFF7N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances

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PFP7N80E / PFF7N80E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka

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MTW7N80E Preferred Device Power MOSFET 7 Amps, 800 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enh

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June 2007 PFP7N80 / PFF7N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances

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HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die IXFK 27N80Q IXFR 27N80Q IXFX 27N80Q VDSS ID25 RDS(on) = 800 V = 27 A = 300 mW trr £ 250 ns PLUS

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SVF7N80T/F/KL_Datasheet 7A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N80T/F/KL is an N-channel enhancement mode power MOS field effect transisto

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HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg IXFH 17N80Q IXFT 17N80Q VDSS ID25 RDS(on) = 800 V =

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N-Channel MOSFET Applications: • Adaptor • LCD Panel Power Features: • Lead Free • Low ON Resistance • Low Gate Charge • Low Crss(typical 13pF) • Imp

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HiPerFETTM Power MOSFETs Q-Class Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data sheet Symbol VDSS

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www.DataSheet4U.com Not for New Designs VDSS ID25 27 A 25 A 27 A 25 A RDS(on) 0.30 0.35 0.30 0.35 Ω Ω Ω Ω HiPerFETTM Power MOSFETs N-Channel Enhance

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PolarTM HiPerFETTM Power MOSFET IXFA7N80P IXFP7N80P VDSS ID25 trr RDS(on) = 800V = 7A ≤ 1.44Ω ≤ 250ns N-Channel Enhancement Mode Avalanche Rated

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