7N80-C Datasheet | Specifications & PDF Download

CoolMOS® Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accord

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N R N-CHANNEL MOSFET JCS7N80C MAIN CHARACTERISTICS Package ID 7A VDSS 800 V Rdson-max（@Vgs=10V） 1.8Ω Qg-typ 32nC   APPLICATIONS

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www.DataSheet4U.com Preliminary data SPP17N80C2 SPB17N80C2 Cool MOS™ Power Transistor Feature · · · · · · · C O OLMOS Power Semiconductors New re

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FQP7N80C / FQPF7N80C — N-Channel QFET® MOSFET FQP7N80C / FQPF7N80C N-Channel QFET® MOSFET 800 V, 6.6 A, 1.9 Ω December 2013 Description This N-Chan

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HFS7N80 July 2005 BVDSS = 800 V HFS7N80 800V N-Channel MOSFET FEATURES ‰ ‰ ‰ ‰ ‰ ‰ ‰ ‰ ‰ Originative New Design Superior Avalanche Rugged Technolog

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N R N-CHANNEL MOSFET JCS7N80C MAIN CHARACTERISTICS Package ID 7A VDSS 800 V Rdson-max（@Vgs=10V） 1.8Ω Qg-typ 32nC   APPLICATIONS

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STF17N80K5 N-channel 800 V, 0.29 Ω typ., 14 A MDmesh™ K5 Power MOSFET in a TO-220FP package Datasheet - production data TO-220FP Figure 1: Internal

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June 2007 PFP7N80 / PFF7N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances

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K7N803609B K7N801809B 256Kx36 & 512Kx18 Pipelined NtRAMTM 8Mb NtRAMTM Specification 100 TQFP with Pb & Pb-Free (RoHS compliant) INFORMATION IN THIS

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K7N803609B K7N803209B K7N801809B Preliminary 256Kx36 & 256Kx32 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Pipelined

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K7N803609B K7N801809B 256Kx36 & 512Kx18 Pipelined NtRAMTM 8Mb NtRAMTM Specification 100 TQFP with Pb & Pb-Free (RoHS compliant) INFORMATION IN THIS

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K7N803649B K7N803249B K7N801849B Preliminary 256Kx36 & 256Kx32 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Pipelined

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SSRF07N80SL Elektronische Bauelemente 7A , 800V , RDS(ON) 1.6Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies ha

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FQA7N80C_F109 — N-Channel QFET® MOSFET FQA7N80C_F109 N-Channel QFET® MOSFET 800 V, 7 A, 1.9 Ω Features • 7.0 A, 800 V, RDS(on) = 1.9 Ω (Max.) @ VGS =

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STF7N80K5, STFI7N80K5 N-channel 800 V, 0.95 Ω typ., 6 A MDmesh™ K5 Power MOSFETs in TO-220FP and I²PAKFP packages Datasheet - production data Feature

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www.vishay.com SiHB17N80AE Vishay Siliconix E Series Power MOSFET D2PAK (TO-263) GD S D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. R

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TSB7N80M / TSI7N80M TSB7N80M / TSI7N80M 800V N-Channel MOSFET General Description This Power MOSFET is produced using True semi‘s advanced planar st

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S7N803631M SS77NN880013863311MM S7N801831M 256Kx36 & 512Kx18 NTSRAM Sync-Pipelined Burst 256Kx36 & 512Kx18 NTSRAM Sync-Pipelined Burst 9Mb NTSRAM Sy

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