7N80-C Datasheet | Specifications & PDF Download

CoolMOS® Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accord

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SVF7N80T/F/KL_Datasheet 7A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N80T/F/KL is an N-channel enhancement mode power MOS field effect transisto

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UNISONIC TECHNOLOGIES CO., LTD 7N80 Power MOSFET 7.0A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N80 is a N-channel mode power MOSFET using

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800V N-Channel MOSFET General Features Proprietary New Planar Technology RDS(ON),typ.=1.5 Ω@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recov

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800V N-Channel MOSFET General Features Proprietary New Planar Technology RDS(ON),typ.=1.5 Ω@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recov

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SSS7N80A-VB www.VBsemi.com SSS7N80A-VB Datasheet N-Channel 800V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (

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SDF07N80-VB www.VBsemi.com SDF07N80-VB Datasheet N-Channel 800V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (

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UNISONIC TECHNOLOGIES CO., LTD 7N80-C 7.0A, 800V NHANNEL POWER MOSFET  DESCRIPTION The UTC 7N80-C is a N-channel mode power MOSFET using UTC’s advanc

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K7N803609B K7N803209B K7N801809B Preliminary 256Kx36 & 256Kx32 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Pipelined

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FQP7N80C / FQPF7N80C — N-Channel QFET® MOSFET FQP7N80C / FQPF7N80C N-Channel QFET® MOSFET 800 V, 6.6 A, 1.9 Ω December 2013 Description This N-Chan

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STF17N80K5 N-channel 800 V, 0.29 Ω typ., 14 A MDmesh™ K5 Power MOSFET in a TO-220FP package Datasheet - production data TO-220FP Figure 1: Internal

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HFS7N80 July 2005 BVDSS = 800 V HFS7N80 800V N-Channel MOSFET FEATURES ‰ ‰ ‰ ‰ ‰ ‰ ‰ ‰ ‰ Originative New Design Superior Avalanche Rugged Technolog

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June 2007 PFP7N80 / PFF7N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances

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K7N803649B K7N803249B K7N801849B Preliminary 256Kx36 & 256Kx32 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 256Kx32 & 512Kx18-Bit Pipelined

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.29Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche

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N R N-CHANNEL MOSFET JCS7N80C MAIN CHARACTERISTICS Package ID 7A VDSS 800 V Rdson-max（@Vgs=10V） 1.8Ω Qg-typ 32nC   APPLICATIONS

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K7N803645B K7N801845B Preliminary 256Kx36 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM Revision History Rev.

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Features  Low gate charge  Improved dv/dt capability  RoHS compliant  JEDEC Qualification Top view TO-220F GP2M007A080F BVDSS 800V N-channel

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