80N07 Datasheet | Specifications & PDF Download

UNISONIC TECHNOLOGIES CO., LTD 80N07 Preliminary 80A, 70V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 80N07 is an N-channel MOSFET using UTC adva

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Silicon N-Channel Power MOSFET ○R CS80N07 A4 General Description： VDSS 70 V CS80N07 A4, the silicon N-channel Enhanced ID（Silicon limited curr

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Silicon N-Channel Power MOSFET ○R CS80N07 AR General Description： VDSS 70 V CS80N07 AR, the silicon N-channel Enhanced ID（Silicon limited curr

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 24mΩ@VGS=10V ·Fully characterized avalanche voltage and curre

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N-Channel Enhancement Mode Power MOSFET General Description The FIR80N075PG uses advanced trench technology and design to provide excellent RDS(ON) wi

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N-Channel Enhancement Mode Power MOSFET General Description The FIR80N075PG uses advanced trench technology and design to provide excellent RDS(ON) wi

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HiperFETTM Power MOSFETs IXFK180N07 IXFX180N07 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier D G S Symbol VDSS VDGR VGSS VG

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OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr

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HiperFETTM Power MOSFETs IXFK180N07 IXFX180N07 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier D G S Symbol VDSS VDGR VGSS VG

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isc N-Channel MOSFET Transistor IXFK180N07 FEATURES ·Drain Current : ID= 180A@ TC=25℃ ·Drain Source Voltage : VDSS= 70V(Min) ·Static Drain-Source On

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Silicon N-Channel Power MOSFET ○R CS80N07 A8 General Description： VDSS 70 V CS80N07 A8, the silicon N-channel Enhanced ID（Silicon limited curr

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Silicon N-Channel Power MOSFET ○R CS80N07 A0 General Description： VDSS 70 V CS80N07 A0, the silicon N-channel Enhanced ID（Silicon limited curr

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Advance Technical Information LinearL2TM Power MOSFETs w/Extended FBSOA IXTA80N075L2 IXTP80N075L2 IXTH80N075L2 VDSS = 75V ID25 = 80A  RDS(on) 24m

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www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFN 200 N06 IXFN 180 N07 IXFN 200

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UNISONIC TECHNOLOGIES CO., LTD UTT80N07 70V, 80A N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT80N07 is a N-channel Power MOSFET, it uses UTC’s adva

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HiPerFETTM Power MOSFETs IXFR 180N07 TM ISOPLUS247 (Electrically Isolated Back Surface) Single MOSFET Die Preliminary data sheet Symbol VDSS VDGR VGS

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OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr

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Advance Technical Information LinearL2TM Power MOSFETs w/Extended FBSOA IXTA80N075L2 IXTP80N075L2 IXTH80N075L2 VDSS = 75V ID25 = 80A  RDS(on) 24m

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isc N-Channel MOSFET Transistor IXTP80N075L2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 24mΩ@VGS=10V ·Fully characterized avalanche vol

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HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated High dV/dt, Low trr IXFN280N07 Symbol VDSS VDGR VGSS VGSM ID25

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