* z International standard package z miniBLOC with Aluminium nitride isolation z Low RDS(on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped inductive switching (UIS) rated z Low package inductance z Fast intrinsic Rectifier Advantages z Easy to mount z Space savings z High power
IXFN280N07 Datasheet (108.59 KB)
IXFN280N07
IXYS
108.59 KB
Power mosfet.
HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated High dV/dt, Low trr IXFN280N07 Symbol VDSS VDGR VGSS VGSM ID25.
📁 Related Datasheet
IXFN280N085 Power MOSFET (IXYS)
IXFN200N06 HiPerFET Power MOSFETs (IXYS)
IXFN200N07 HiPerFET Power MOSFETs (IXYS)
IXFN200N10P Polar HiPerFET Power MOSFET (IXYS)
IXFN20N120 HiPerFET Power MOSFETs (IXYS Corporation)
IXFN20N120P Polar Power MOSFET HiPerFET (IXYS Corporation)
IXFN21N100Q Power MOSFET (IXYS)
IXFN220N20X3 Power MOSFET (IXYS)
IXFN230N10 Power MOSFET (IXYS Corporation)
IXFN230N20T GigaMOS Power MOSFET (IXYS)
