IXFN280N07 Datasheet - IXYS

IXFN280N07 Power MOSFET

HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated High dV/dt, Low trr IXFN280N07 Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IAR EAR EAS dV/dt PD TJ TJM Tstg T L VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Terminal current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from case for 10s 50/60Hz, RMS II.

IXFN280N07 Features

* z International standard package z miniBLOC with Aluminium nitride isolation z Low RDS(on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped inductive switching (UIS) rated z Low package inductance z Fast intrinsic Rectifier Advantages z Easy to mount z Space savings z High power

IXFN280N07-IXYS.pdf