Datasheet Specifications
- Part number
- IXFN280N07
- Manufacturer
- IXYS
- File Size
- 108.59 KB
- Datasheet
- IXFN280N07-IXYS.pdf
- Description
- Power MOSFET
Description
HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated High dV/dt, Low trr IXFN280N07 Symbol VDSS VDGR VGSS VGSM ID25.
Features
* z International standard package z miniBLOC with Aluminium nitride isolation z Low RDS(on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped inductive switching (UIS) rated z Low package inductance z Fast intrinsic Rectifier Advantages z Easy to mount z Space savings z High powerApplications
* z DC-DC converters z Synchronous rectification z Battery chargers z Switched-mode and resonant-mode power supplies z DC choppers z Temperature and lighting controls z Low voltage relays © 2008 IXYS Corporation, All rights reserved DS98555C(4/08) Symbol Test Conditions (TJ = 25°C, unless otherwiIXFN280N07 Distributors
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