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IXFN280N07 Power MOSFET

IXFN280N07 Description

HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated High dV/dt, Low trr IXFN280N07 Symbol VDSS VDGR VGSS VGSM ID25.

IXFN280N07 Features

* z International standard package z miniBLOC with Aluminium nitride isolation z Low RDS(on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped inductive switching (UIS) rated z Low package inductance z Fast intrinsic Rectifier Advantages z Easy to mount z Space savings z High power

IXFN280N07 Applications

* z DC-DC converters z Synchronous rectification z Battery chargers z Switched-mode and resonant-mode power supplies z DC choppers z Temperature and lighting controls z Low voltage relays © 2008 IXYS Corporation, All rights reserved DS98555C(4/08) Symbol Test Conditions (TJ = 25°C, unless otherwi

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Datasheet Details

Part number
IXFN280N07
Manufacturer
IXYS
File Size
108.59 KB
Datasheet
IXFN280N07-IXYS.pdf
Description
Power MOSFET

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Power MOSFET IXYS
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