IXFN280N085 Power MOSFET

IXYS

Description

HiPerFETTM Power MOSFETs Single Die MOSFET IXFN280N085 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGSS VGSM I.

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Datasheet Specifications

Part number: IXFN280N085
Manufacturer: IXYS
File Size: 131.39 KB
Datasheet: IXFN280N085-IXYS.pdf
Description: Power MOSFET

Features

* International standard package
* miniBLOC, with Aluminium nitride isolation
* Low RDS(on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Avalanche rated
* Guaranteed FBSOA
* Low package inductance
* Fast intrinsic Rectifie

Applications

* DC-DC converters
* Battery chargers
* Switched-mode and resonant-mode power supplies
* DC choppers
* Temperature and lighting controls © 2008 IXYS Corporation, All rights reserved DS98747B(12/08) Symbol Test Conditions (TJ = 25°C, unless otherwise speci

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IXFN280N085 Power MOSFET IXYS

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