* International standard package
* miniBLOC, with Aluminium nitride isolation
* Low RDS(on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Avalanche rated
* Guaranteed FBSOA
* Low package inductance
* Fast intrinsic Rectifie
IXFN280N085 Datasheet (131.39 KB)
IXFN280N085
IXYS
131.39 KB
Power mosfet.
HiPerFETTM Power MOSFETs Single Die MOSFET IXFN280N085 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGSS VGSM I.
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