80N08A Datasheet | Specifications & PDF Download

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N-Channel 80V (D-S) MOSFET ME80N08AF/ME80N08AF-G GENERAL DESCRIPTION The ME80N08AF is the N-Channel logic enhancement mode power field effect transi

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80V N-Channel Enhancement Mode ME80N08AH/ME80N08AH-G GENERAL DESCRIPTION The ME80N08AH is the N-Channel logic enhancement mode power field effect tr

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N-Channel 80V (D-S) MOSFET ME80N08AF/ME80N08AF-G GENERAL DESCRIPTION The ME80N08AF is the N-Channel logic enhancement mode power field effect transi

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80V N-Channel Enhancement Mode ME80N08AH/ME80N08AH-G GENERAL DESCRIPTION The ME80N08AH is the N-Channel logic enhancement mode power field effect tr

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current: ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance :

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BR80N08A Rev.D Nov.-2015 DATA SHEET / Descriptions TO-220 N MOS 。N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,。 Low gate charge,

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Silicon N-Channel Power MOSFET ○R CS180N08 A8 General Description： CS180N08 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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Silicon N-Channel Power MOSFET ○R CS80N08 A4 General Description： CS80N08 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Tre

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SAMWIN SW80N08A N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max9.2mΩ)@VGS=10V ■ Gate Charge (Typical 82nC) ■ Improved dv

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Features  N-Channel，10V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=10 V  100% Avalanche test  Pb-free lead plati

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Features  N-Channel，10V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=10 V  100% Avalanche test  Pb-free lead plati

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Features  N-Channel，10V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=10 V  100% Avalanche test  Pb-free lead plati

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