8N100-C Datasheet | Specifications & PDF Download

HiPerFETTM Power MOSFET IXFN38N100Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Preliminary Data Sheet

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UNISONIC TECHNOLOGIES CO., LTD 8N100-C 8.0A, 1000V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N100-C provide excellent RDS(ON), low gate charge and

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High Voltage Depletion Mode Power MOSFET IXTA08N100D2HV D VDSX = ID(on) >  RDS(on) 1000V 800mA 21 N-Channel G S Symbol VDSX VDGX VGSX VGSM PD

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www.DataSheet.co.kr Advance Technical Information HiperFETTM Power MOSFETs Q3-Class N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectif

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www.DataSheet.co.kr Advance Technical Information HiperFETTM Power MOSFETs Q3-Class N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectif

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UNISONIC TECHNOLOGIES CO., LTD 8N100-FC 8A, 1000V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N100-FC provide excellent RDS(ON), low gate charge and

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PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN38N100P VDSS ID25 RDS(on) trr = = ≤ ≤ 1000V 3

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Depletion Mode MOSFET N-Channel IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 D VDSX = ID(on) >  RDS(on) 1000V 800mA 21 TO-252 (IXTY) G S G S D (Tab)

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Depletion Mode MOSFET N-Channel IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 D VDSX = ID(on) >  RDS(on) 1000V 800mA 21 TO-252 (IXTY) G S G S D (Tab)

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 20Ω@VGS=10V ·Fully characterized avalanche voltage and curren

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY08N100P IXTA08N100P IXTP08N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY08N100P IXTA08N100P IXTP08N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY08N100P IXTA08N100P IXTP08N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt

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MOSFET – N-Channel, QFET) 1000 V, 8.0 A, 1.45 W FQH8N100C Description This N−Channel enhancement mode power MOSFET is produced using ON Semiconductor’

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FQH8N100C — N-Channel QFET® MOSFET FQH8N100C N-Channel QFET® MOSFET 1000 V, 8.0 A, 1.45 Ω Description This N-Channel enhancement mode power MOSFET is

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www.DataSheet4U.com HiPerFETTM Power MOSFETs IXFB38N100Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr

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HiPerFETTM Power MOSFET Q2-Class IXFL38N100Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr Symbol VDSS

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Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrin

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isc N-Channel MOSFET Transistor IXTY08N100P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 20Ω@VGS=10V ·Fully characterized avalanche volta

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