8N60B Datasheet | Specifications & PDF Download

Preliminary Technical Information GenX3TM 600V IGBT with Diode Medium speed low Vsat PT IGBTs 5-40 kHz switching IXGH48N60B3D1 VCES = IC110 = VCE(s

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MDF8N60B N-channel MOSFET 600V MDF8N60B N-Channel MOSFET 600V, 8A, 1.05Ω General Description These N-channel MOSFET are produced using advanced Magn

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WFF8N60B Product Description Silicon N-Channel MOSFET Features � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Swit

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WFP8N60B Product Description Silicon N-Channel MOSFET Features � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Swit

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Low VCE(sat) IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol VCES VCGR VGES VGEM IC25

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Ultra-Low VCE(sat) IGBT with Diode IXGH 28N60B IXGT 28N60B VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol www.DataSheet4U.com V

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APT38N60BC6 APT38N60SC6 600V 38A 0.099Ω COOLMOS Power Semiconductors Super Junction MOSFET • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low

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8N60(F,B,H) 8A mps,600 Volts N-CHANNEL MOSFET FEATURE  8A,600V,RDS(ON)=1.0Ω@VGS=10V/4A  Low gate charge  Low Ciss  Fast switching  100% avalan

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GenX3TM 600V IGBT Medium speed low Vsat PT IGBTs 5-40 kHz switching IXGA48N60B3 IXGP48N60B3 IXGH48N60B3 VCES = 600V IC110 = 48A VCE(sat) ≤ 1.8V TO-2

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GenX3TM 600V IGBT Medium speed low Vsat PT IGBTs 5-40 kHz switching IXGA48N60B3 IXGP48N60B3 IXGH48N60B3 VCES = 600V IC110 = 48A VCE(sat) ≤ 1.8V TO-2

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www.DataSheet.co.kr R N N-CHANNEL MOSFET JCS8N60B MAIN CHARACTERISTICS Package ID VDSS Rdson （@Vgs=10V） Qg z z z UPS 7.0 A 600 V 1.2 Ω 25

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Preliminary Technical Information www.DataSheet4U.com GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode IXGH48N60B3C1 VCES IC110 VCE(sat) tfi(typ) = =

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GenX3TM 600V IGBT Medium speed low Vsat PT IGBTs 5-40 kHz switching IXGA48N60B3 IXGP48N60B3 IXGH48N60B3 VCES = 600V IC110 = 48A VCE(sat) ≤ 1.8V TO-2

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=38A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance :

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Low VCE(sat) IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol VCES VCGR VGES VGEM IC25

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Ultra-Low VCE(sat) IGBT with Diode IXGH 28N60B IXGT 28N60B VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol www.DataSheet4U.com V

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Ultra-Low VCE(sat) IGBT with Diode IXGH 28N60B IXGT 28N60B VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol www.DataSheet4U.com V

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