9N40 Datasheet | Specifications & PDF Download

Silicon N-Channel Power MOSFET CS19N40 AN ○R General Description： CS19N40 AN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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9N40 UNISONIC TECHNOLOGIES CO., LTD Preliminary 9A, 400V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 9N40 is an N-channel mode power

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AOD9N40 400V,8A N-Channel MOSFET General Description The AOD9N40 is fabricated using an advanced high voltage MOSFET process that is designed to deli

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AOT9N40 400V,8A N-Channel MOSFET General Description Product Summary The AOT9N40 is fabricated using an advanced high voltage MOSFET process that i

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AOD9N40 400V,8A N-Channel MOSFET General Description The AOD9N40 is fabricated using an advanced high voltage MOSFET process that is designed to deli

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MDD9N40 N-channel MOSFET 400V MDD9N40 N-Channel MOSFET 400V, 6A, 0.85Ω General Description These N-channel MOSFET are produced using advanced Magnac

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Silicon N-Channel Power MOSFET CS19N40 A8H ○R General Description： CS19N40 A8H the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-ali

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistanc

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Silicon N-Channel Power MOSFET ○R CS19N40 ANR General Description： VDSS 400 V CS19N40 ANR, the silicon N-channel Enhanced ID 19 A VDMOSFETs,

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Silicon N-Channel Power MOSFET ○R CS19N40 A8R General Description： VDSS 400 V CS19N40 A8R, the silicon N-channel Enhanced ID 19 A VDMOSFETs,

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Silicon N-Channel Power MOSFET ○R CS19N40F A9R General Description： VDSS 400 V CS19N40F A9R, the silicon N-channel Enhanced ID 19 A VDMOSFET

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 9N40 ·DESCRIPTION ·Drain Current ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Fas

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FDP19N40 — N-Channel UniFETTM MOSFET FDP19N40 N-Channel UniFETTM MOSFET 400 V, 19 A, 240 mΩ Features • RDS(on) = 200 mΩ (Typ.) @ VGS = 10 V, ID = 9.5

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FDP19N40 / FDPF19N40 N-Channel MOSFET October FDP19N40 / FDPF19N40 N-Channel MOSFET 400V, 19A, 0.24Ω Features • RDS(on) =0.2Ω ( Typ.)@ VGS = 10V, ID

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FemtoClock® NG Jitter Attenuator and Clock Synthesizer 8V19N407 DATA SHEET General Description 8V19N407 is a fully integrated FemtoClock® NG Jitter

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FemtoClock® NG Jitter Attenuator and Clock Synthesizer 8V19N408 DATA SHEET General Description 8V19N408 is a fully integrated FemtoClock® NG Jitter

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isc N-Channel MOSFET Transistor AOD9N40 FEATURES ·Drain Current –ID= 8.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Re

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isc N-Channel MOSFET Transistor AOT9N40 FEATURES ·Drain Current –ID= 8.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Re

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isc N-Channel MOSFET Transistor FDP19N40 FEATURES ·Drain Current : ID= 19A@ TC=25℃ ·Drain Source Voltage : VDSS= 240V(Min) ·Static Drain-Source On-R

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