9N80 Datasheet | Specifications & PDF Download

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt IXFH 9N80Q IXFT 9N80Q VDSS I D25 RDS(on) = 800 V = 9

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HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt IXFH 9N80Q IXFT 9N80Q VDSS I D25 RDS(on) = 800 V = 9

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Preliminary Data Sheet HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) trr IXFH8N80 800

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 9N80 ·DESCRIPTION ·Drain Current ID= 9A@ TC=25℃ ·Drain Source Volta

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STP9N80K5, STW9N80K5 N-channel 800 V, 0.73 Ω typ., 7 A MDmesh™ K5 Power MOSFETs in a TO-220 and TO-247 packages Datasheet - production data TAB 3 2

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STF9N80K5, STFI9N80K5 N-channel 800 V, 0.73 Ω typ., 7 A MDmesh™ K5 Power MOSFETs in TO-220FP and I²PAKFP packages Datasheet - production data Feature

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HFP9N80_HFS9N80 Oct 2016 HFP9N80 / HFS9N80 800V N-Channel MOSFET Features ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Ve

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HFP9N80_HFS9N80 Oct 2016 HFP9N80 / HFS9N80 800V N-Channel MOSFET Features ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Ve

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STP9N80K5, STW9N80K5 N-channel 800 V, 0.73 Ω typ., 7 A MDmesh™ K5 Power MOSFETs in a TO-220 and TO-247 packages Datasheet - production data TAB 3 2

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UNISONIC TECHNOLOGIES CO., LTD 9N80 9A, 800V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 9N80 is an N-channel mode power MOSFET using UTC’s adva

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STF9N80K5, STFI9N80K5 N-channel 800 V, 0.73 Ω typ., 7 A MDmesh™ K5 Power MOSFETs in TO-220FP and I²PAKFP packages Datasheet - production data Feature

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STD9N80K5 Datasheet N-channel 800 V, 730 mΩ typ., 7 A MDmesh K5 Power MOSFET in a DPAK package TAB 23 1 DPAK D (2 , TAB) G( 1) S(3) AM15572V1 Feat

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isc N-Channel MOSFET Transistor ·DESCRIPTION ·Avalanche rugged technology ·Rugged gate oxide technology ·Lower input capacitance ·Minimum Lot-to-Lot

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com SSH9N80A BVDSS = 800 V RDS(on) = 1.3 Ω ID

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SSFP9N80 StarMOST Power MOSFET ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ G

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