| No |
Part Number |
Description |
Manufacture |
PDF |
| 13 |
AM1214-100 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
AM1214-100
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
. . . . . . .
PRELIMINARY DATA
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVER |
STMicroelectronics
|
|
| 12 |
AM1214-175 |
RF & MICROWAVE TRANSISTORS
AM1214-175
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
........ REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLA |
STMicroelectronics
|
|
| 11 |
AM1214-200 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
AM1214-200
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
. . . . . . .
PRELIMINARY DATA
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVER |
STMicroelectronics
|
|
| 10 |
AM1214-250 |
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS
AM1214-250
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS
TARGET DATA
• REFRACTORY /GOLD METALLIZATION • EMITTER SITE BALLASTING • LOW RF THERMAL RESISTANCE • INPUT/OUTPU |
ST Microelectronics
|
|
| 9 |
AM1214-300 |
RF & MICROWAVE TRANSISTORS
AM1214-300
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
........ REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLA |
STMicroelectronics
|
|
| 8 |
AM1214-300 |
NPN SILICON RF POWER TRANSISTOR
AM1214-300
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI AM1214-300 is Designed for 1200 – 1400 MHz, L-Band Applications.
PACKAGE STYLE .400 2L FLG(A)
4x .062 x 45° 2xB |
ASI
|
|
| 7 |
AM1214-325 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
AM1214-325
. . . . . . . .
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING |
STMicroelectronics
|
|
| 6 |
AM1280 |
linear CCD type sensor
AM1280/AM2280 Datasheet
AM1280/AM2280 Datasheet
Description
AM1280/AM2280 spectro-module is built in with the linear CCD type sensor and 8 pin external interface. The optical engine is very simple and |
OTO Photonics
|
|
| 5 |
AM12N50P |
N-Channel MOSFET
Analog Power
N-Channel 500-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • Off-line Power Supplies • Elect |
Analog Power
|
|
| 4 |
AM12N65B |
N-Channel MOSFET
Analog Power
N-Channel 650-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • White LED boost converters • Au |
Analog Power
|
|
| 3 |
AM12N65P |
N-Channel MOSFET
Analog Power
N-Channel 650-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • White LED boost converters • Au |
Analog Power
|
|
| 2 |
AM12N65PCFM |
N-Channel MOSFET
Analog Power
N-Channel 650-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • Power Supplies • Motor Drives |
Analog Power
|
|
