AM12 Datasheet | Specifications & PDF Download

Product data sheet Characteristics Complementary ISO thread Detection face Detector flush mounting acceptance Front material Enclosure material Operat

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NAM12S06-D DC-DC Converter Technical Manual Issue Date 1.0 2020-02-12 HUAWEI TECHNOLOGIES CO., LTD. NAM12S06-D DC-DC Converter Technical Manual A

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Philips Optical Storage DATA SHEET VAM1202/12 CD mechanism for 2x Speed Product specification Version 1.1 Philips Components September 2000 Philips

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www.vishay.com V8PAM12 Vishay General Semiconductor Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier eSMP® Series Top View Bottom View

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AM1280/AM2280 Datasheet AM1280/AM2280 Datasheet Description AM1280/AM2280 spectro-module is built in with the linear CCD type sensor and 8 pin externa

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AM1214-325 . . . . . . . . RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABI

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eAMS Series 16 Bits DSP Sound Processor Product Specification DOC. VERSION 1.7 ELAN MICROELECTRONICS CORP. DEC 2009 Trademark Acknowledgments: IBM is

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Analog Power N-Channel 650-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applica

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Analog Power N-Channel 700-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applica

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Philips Optical Storage DATA SHEET VAM1202/12 CD mechanism for 2x Speed Product specification Version 1.1 Philips Components September 2000 Philips

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AM1214-100 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS . . . . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED

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AM1214-175 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY L

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AM1214-200 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS . . . . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED

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www.DataSheet4U.com BAM120 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BAM120 is Designed to operate in a collector modulated VHF Power Am

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www.DataSheet4U.com VAM 120 120 Watts, 27 Volts, Class AB Defcom 100 - 150 MHz GENERAL DESCRIPTION The VAM 120 is a COMMON EMITTER device designed to

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AM1214-300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AM1214-300 is Designed for 1200 – 1400 MHz, L-Band Applications. www.DataSheet4U.com

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Analog Power N-Channel 500-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applica

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Analog Power N-Channel 650-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applica

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AiT Semiconductor Inc. www.ait-ic.com AM12NS10H MOSFET 100V, N-CHANNEL SGT MOSFET DESCRIPTION FEATURES The AM12NS10H is available in a TO-220, TO-

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AM1214-300 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY L

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