Toshiba
2SA1090 - Silicon PNP transistor
:
2SA1090
I2
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SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
(INDUSTRIAL APPLICATIONS)
HIGH FREQUENCY AMPLIFIER APPLICATIONS.
HIGH SPEED SWITCHING APPL
(15 views)
Taiwan Semiconductor Company
SRAF1090 - (SRAF1020 - SRAF10150) Schottky Barrier Rectifiers
SRAF1020 - SRAF10150
Isolated 10.0 AMPS. Schottky Barrier Rectifiers ITO-220AC
.185(4.7) .173(4.4) .124(3.16) .118(3.00)
.406(10.3) .390(9.90) .134(3
(14 views)
Tyco Electronics
PH1090-175L - Avionics Pulsed Power Transistor - 175 Watts/ 1030-1090 MHz/ 250ms Pulse/
Avionics Pulsed Power Transistor 175 Watts, 1030-1090 MHz, 250µs Pulse, 10 % Duty
PH1090-175L
PH1090-175L
Avionics Pulsed Power Transistor - 175 Wa
(13 views)
International Rectifier
AN-1090 - Controller Dynamics/Tuning
www.DataSheet4U.com
15
Application Note AN-1090 IRMCF3xx Series Controller Dynamics and Tuning
By Eddy Ho, International Rectifier
Table of Contents
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Intel
5962-9310902MXA - Processor Miscellaneous
www.DataSheet4U.com
DataSheet 4 U .com
www.DataSheet4U.com
DataSheet 4 U .com
www.DataSheet4U.com
DataSheet 4 U .com
www.DataSheet4U.com
DataSh
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Toshiba Semiconductor
2SD1090 - NPN TRANSISTOR
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Micropac Industries
61090 - SURFACE MOUNT (NPN) GENERAL PURPOSE TRANSISTOR
61090
SURFACE MOUNT (NPN) GENERAL PURPOSE TRANSISTOR (2N2222AUB)
Mii
OPTOELECTRONIC PRODUCTS DIVISION
Features: • • • • • Hermetically sealed Minia
(11 views)
Infineon Technologies AG
PTF210901 - LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz
PTF210901
LDMOS RF Power Field Effect Transistor 90 W, 2110–2170 MHz
Description
The PTF210901 is an internally matched 90 W GOLDMOS FET intended for
(11 views)
Sony Corporation
CXG1090TN - High Power 2 x 4 Antenna Switch MMIC with Integrated Control Logic
CXG1090TN
High Power 2 × 4 Antenna Switch MMIC with Integrated Control Logic
Description The CXG1090TN is a high power antenna switch MMIC. The CXG109
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Motorola
MRF5S21090LR3 - RF Power Field Effect Transistors
www.DataSheet4U.com
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRF5S21090L/D
The RF MOSFET Line
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ETC
2N1090 - Power Transistor
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Taiwan Semiconductor
MBRS1090 - Surface Mount Schottky Barrier Rectifiers
MBRS1035 - MBRS10150
Taiwan Semiconductor
CREAT BY ART
10A, 35V - 150V Surface Mount Schottky Barrier Rectifiers
FEATURES
- Low power loss, high effi
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Advanced Linear Devices
ALD110908A - QUAD/DUAL N-CHANNEL MOSFET
ADVANCED LINEAR DEVICES, INC.
e TM
EPAD ® ENAB
L
E
D
ALD110808A/ALD110808/ALD110908A/ALD110908
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®
PREC
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Sanyo Electric
LC21090B - Gate Arrays Monolithic ICs
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Advanced Power Technology
1090MP - Class C Avionics
1090MP
90 Watts, 50 Volts, Class C Avionics 1025 - 1150 MHz
GENERAL DESCRIPTION
The 1090MP is a COMMON BASE bipolar transistor. It is designed for pul
(9 views)
TriQuint Semiconductor
AGR21090E - Transistor
AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR21090E is a high-voltage, gold-metalized, laterally diffused
(9 views)
Advanced Linear Devices
ALD110900 - PRECISION MATCHED PAIR MOSFET ARRAY
ADVANCED LINEAR DEVICES, INC.
e TM
EPAD ® ENAB
L
E
D
ALD110800A/ALD110800/ALD110900A/ALD110900
QUAD/DUAL N-CHANNEL ZERO THRESHOLD™ EPAD®
PRECI
(9 views)
Luguang Electronic
MBR1090CT - Schottky Rectifier
MBR1035CT-MBR10200CT
10.0AMP. Schottky Barrier Rectifiers
TO-220AB
Features
Plastic material used carries Underwriters Laboratory Classifications 94
(9 views)
Taiwan Semiconductor
MBR1090CT - Dual Common Cathode Schottky Rectifiers
MBR1035CT - MBR10200CT
Taiwan Semiconductor
CREAT BY ART
10A, 35V - 200V Dual Common Cathode Schottky Rectifiers
FEATURES
- Low power loss, high effic
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Link-PP
LPB81090 - T1/CEPT/ISDN-Pri Transformers
T1/CEPT/ISDN-Pri Transformers
Dual SMT Small package Isolation Voltage: 1500 Vrms For RoHS part add suffix NL RoHS NL peak solder rating 235
(8 views)