AN-1090 Datasheet | Specifications & PDF Download

: 2SA1090 I2 ) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (INDUSTRIAL APPLICATIONS) HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPL

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HIP1090 March 1995 Protected High Side Power Switch with Transient Suppression Description The HIP1090 is a Protected Power Interface Switch designed

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www.DataSheet4U.com 15 Application Note AN-1090 IRMCF3xx Series Controller Dynamics and Tuning By Eddy Ho, International Rectifier Table of Contents

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HAT1090C Silicon P Channel MOS FET Power Switching REJ03G1228-0400 Rev.4.00 Jun. 13, 2005 Features • Low on-resistance RDS(on) = 50 mΩ typ. (at VGS =

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CXG1090TN High Power 2 × 4 Antenna Switch MMIC with Integrated Control Logic Description The CXG1090TN is a high power antenna switch MMIC. The CXG109

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1090MP 90 Watts, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1090MP is a COMMON BASE bipolar transistor. It is designed for pul

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ADVANCED LINEAR DEVICES, INC. e TM EPAD ® ENAB L E D ALD110808A/ALD110808/ALD110908A/ALD110908 QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PREC

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ADVANCED LINEAR DEVICES, INC. e TM EPAD ® ENAB L E D ALD110808A/ALD110808/ALD110908A/ALD110908 QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PREC

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ADVANCED LINEAR DEVICES, INC. e TM EPAD ® ENAB L E D ALD110800A/ALD110800/ALD110900A/ALD110900 QUAD/DUAL N-CHANNEL ZERO THRESHOLD™ EPAD® PRECI

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CXG1090EN High Power 2 × 4 Antenna Switch MMIC with Integrated Control Logic Description The CXG1090EN is a high power antenna switch MMIC. This IC is

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AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21090E is a high-voltage, gold-metalized, laterally diffused

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1090MA/D www.DataSheet4U.com The RF Line Microwave Pulse Power Transistors Designe

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ADVANCED LINEAR DEVICES, INC. e TM EPAD ® ENAB L E D ALD110802/ALD110902 QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOS

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ADVANCED LINEAR DEVICES, INC. e TM EPAD ® ENAB L E D ALD110800A/ALD110800/ALD110900A/ALD110900 QUAD/DUAL N-CHANNEL ZERO THRESHOLD™ EPAD® PRECI

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T1/CEPT/ISDN-Pri Transformers
Dual SMT Small package
Isolation Voltage: 1500 Vrms
For RoHS part add suffix NL
RoHS NL peak solder rating 235

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Schottky Barrier Rectifier INCHANGE Semiconductor MBR1090 FEATURES ·Guard -Ring for Stress Protection ·Low Forward Voltage ·Low Power Loss/High Effi

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SSF1090 100V N-Channel MOSFET Features  Advanced trench process technology  Ideal for convertors and power controls  High density cell design for

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61090 SURFACE MOUNT (NPN) GENERAL PURPOSE TRANSISTOR (2N2222AUB) Mii OPTOELECTRONIC PRODUCTS DIVISION Features: • • • • • Hermetically sealed Minia

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MBR1035CT-MBR10200CT 10.0AMP. Schottky Barrier Rectifiers TO-220AB Features Plastic material used carries Underwriters Laboratory Classifications 94

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