BS107 Datasheet | Specifications & PDF Download

www.DataSheet4U.com BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N–Channel TO–92 MAXIMUM RATINGS Rating Drain–Source Volt

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DB(S)101G - DB(S)107G Single Phase 1.0 AMP. Glass Passivated Bridge Rectifiers DB Features Glass passivated junction Ideal for printed circuit board

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Elektronische Bauelemente EBS101 ~ EBS107 Voltage 50V ~ 1000V 1.0 Amp Silicon Bridge Rectifiers RoHS Compliant Product A suffix of “-C” specifies ha

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BS107 N–CHANNEL ENHANCEMENT MODE TRANSISTOR Features · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Tel

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DISCRETE SEMICONDUCTORS DATA SHEET BS107A N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconducto

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MCC
     omponents 21201 Itasca Street Chatsworth  # $ % # HDBS101G THRU HDBS107G Featu

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS107/D TMOS Switching N–Channel — Enhancement 2 GATE 1 DRAIN BS107 BS107A ® 3 SOU

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www.DataSheet4U.com N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – SEPT 93 FEATURES * 200 Volt VDS * RDS(on)=28Ω BS107PT D G S E-Line TO9

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EBS101 thru EBS107 Glass Passivated Bridge Rectifier .200(5.1 ) .193(4.9 ) .138(3.5 ) .126(3.2 ) .161(4.1 ) .154(3.9 ) .028(0.7 ) .024(0.6 ) .216

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS107/D TMOS Switching N–Channel — Enhancement 2 GATE 1 DRAIN BS107 BS107A ® 3 SOU

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DISCRETE SEMICONDUCTORS DATA SHEET BS107 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductor

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BS107A Small Signal MOSFET 250 mA, 200 V, N−Channel TO−92 Features • AEC−Q101 Qualified and PPAP Capable • This is a Pb−Free Device* MAXIMUM RATINGS

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BS107P 200V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET Features  BVDSS > 200V  RDS(ON) ≤ 23Ω @ VGS= 2.6V  ID = 120mA Maximum Continuous Drain Cur

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Siliconix VN2010L/BS107 NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number VN2010L BS107 V(BR)DSS Min (V) 200 rDS(on) Max (W

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VN2010L/BS107 Vishay Siliconix N-Channel 200-V (D-S) MOSFETs PRODUCT SUMMARY Part Number VN2010L BS107 200 V(BR)DSS Min (V) rDS(on) Max (W) 10 @ V

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TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 -V (D-S) MOSFET PRODUCT SUMMARY Part Number TN2404K TN2404KL/BS107KL VDS Min (V) 240 rDS(on

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N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – SEPT 93 FEATURES * 200 Volt VDS * RDS(on)=23Ω BS107P D G S REFER TO BS107PT FOR GRAPHS E-L

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