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C3279 Datasheet | Specifications & PDF Download

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C3279 NPN silicon

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Toshiba Semiconductor Logo

C3279 (Toshiba Semiconductor)

2SC3279

2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3279 Strobe Flash Applications Medium Power Amplifier Applications · High DC c
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FGX Logo

C3279 (FGX)

NPN silicon

·ç¹âÐÀ¼¼Êõ×ÊÁÏ ■■ APPLICATION:POWER AMPLIFIER APPLICATION、 SWITCHING APPLICATION. ■■MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-base voltage Collecto
(39 views)
WEJ Logo

2SC3279 (WEJ)

NPN Transistor

RoHS 2SC3279 2SC3279 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(B
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LGE Logo

2SC3279 (LGE)

NPN Transistor

2SC3279(NPN) TO-92 Bipolar Transistors 1. EMITTER 2. COLLECTOR 3. BASE TO-92 Features High DC current gain and excellent hFE linearity Low saturati
(14 views)

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