C5-K Datasheet | Specifications & PDF Download

NPN Silicon Planar Epitaxial Transistors 1 2 3 BC546 BC547 BC548 TO-92 SMD Package Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise)

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www.datasheet4u.com April 2007 HYB25DC512800B[E/F] HYB25DC512160B[E/F] 512-Mbit Double-Data-Rate SDRAM DDR SDRAM RoHS Compliant Products Internet

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TPC512x 12-bit 1-MHz SAR ADC Features  16 or 8-channel 12-Bit SAR ADC − Supporting Ranges from 0 to 2.5 V and 0 to 5 V − Programmable Out-of-Range A

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TPC512x 12-bit 1-MHz SAR ADC Features  16 or 8-channel 12-Bit SAR ADC − Supporting Ranges from 0 to 2.5 V and 0 to 5 V − Programmable Out-of-Range A

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TPC5160 16bit SAR ADC with full differential input Features  16bit SAR ADC without zero latency − Throughput speed: 600 KSPS  Unipolar, differentia

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7x5mm 7x5mm Ceramic SMD Oscillator ■ Model No. C57XH C57XH Features - HCMOS/TTL - Ceramic SMD Package, Seam sealed, 7x5x1.8mm - 1.8V / 2.5V / 3.3V / 5

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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74HC595 8−Bit Serial−Input/Serial or Parallel−Output Shift Register with Latched 3−State Outputs High−Performance Silicon−Gate CMOS The 74HC595 consi

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BC54xPAS-Q series 45 V, 1 A NPN medium power transistors 27 April 2023 Product data sheet 1. General description NPN medium power transistor series

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NJM5532 LOW-NOISE DUAL OPERATIONAL AMPLIFIER ■ GENERAL DESCRIPTION The NJM5532 is a high performance dual low noise operational amplifier. Compared to

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SSR PW PRIMARY DATASHEET SDC5091D/M/S/Q SDC5091X PWM SDC5091X lCS 700V SDC5091X SDC5091X 3.3- 20V VDD SDC5091X SDC5091X 0CP OLP VDD

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NPN Silicon Planar Epitaxial Transistors 1 2 3 BC546 BC547 BC548 TO-92 SMD Package Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise)

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SSR PW PRIMARY DATASHEET SDC5091D/M/S/Q SDC5091X PWM SDC5091X lCS 700V SDC5091X SDC5091X 3.3- 20V VDD SDC5091X SDC5091X 0CP OLP VDD

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SC5296 DESCRIPTION ·With TO-3PML package ·High breakdown voltage, high r

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BC54xPAS-Q series 45 V, 1 A NPN medium power transistors 27 April 2023 Product data sheet 1. General description NPN medium power transistor series

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isc Silicon NPN Power Transistor 2SC5200 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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Amplifier Transistors NPN Silicon BC546B, BC547A, B, C, BC548B, C Features • Pb−Free Packages are Available* DATA SHEET www.onsemi.com COLLECTOR 1 2

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